Page 1
2N6071A/B Series
Preferred Device
Sensitive Gate T riacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Device Marking: Device T ype, e.g., 2N6071A, Date Code
MAXIMUM RATINGS (T
Rating
*Peak Repetitive Off-State Voltage
(TJ = * 40 to 110° C, Sine Wave,
50 to 60 Hz, Gate Open)
*On-State RMS Current (TC = 85°C)
Full Cycle Sine Wave 50 to 60 Hz
*Peak Non–repetitive Surge Current
(One Full cycle, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
*Peak Gate Power
(Pulse Width ≤ 1.0 µ s, T C = 85°C)
*Average Gate Power
(t = 8.3 ms, TC = 85°C)
*Peak Gate Voltage
(Pulse Width ≤ 1.0 µ s, T C = 85°C)
*Operating Junction Temperature Range T
*Storage Temperature Range T
Mounting Torque (6-32 Screw)
*Indicates JEDEC Registered Data.
(1) V
(2) Torque rating applies with use of a compression washer. Mounting torque in
and V
DRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
RRM
= 25° C unless otherwise noted)
J
Symbol Value Unit
(1)
2N6071A,B
2N6073A,B
2N6075A,B
(2)
for all types can be applied on a continuous basis. Blocking
V
DRM,
V
RRM
200
400
600
I
T(RMS)
I
TSM
I2t 3.7 A2s
P
GM
P
G(AV)
V
GM
J
stg
— 8.0 in. lb.
4.0 Amps
30 Amps
10 Watts
0.5 Watt
5.0 Volts
–40 to
+110
–40 to
+150
Volts
°C
°C
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TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
MT2
3
2
1
TO–225AA
(formerly TO–126)
CASE 077
STYLE 5
PIN ASSIGNMENT
1
2
3
Main Terminal 1
Main Terminal 2
ORDERING INFORMATION
Device Package Shipping
2N6071A TO225AA 500/Box
2N6071B TO225AA 500/Box
2N6073A TO225AA 500/Box
2N6073B TO225AA 500/Box
2N6075A TO225AA 500/Box
2N6075B TO225AA 500/Box
Preferred devices are recommended choices for future use
and best overall value.
MT1
G
Gate
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1 Publication Order Number:
2N6071/D
Page 2
2N6071A/B Series
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
θJC
θJA
L
3.5 ° C/W
75 ° C/W
260 ° C
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25° C unless otherwise noted; Electricals apply in both directions)
C
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated V
DRM
, V
Gate Open) TJ = 25°C
RRM;
TJ = 110°C
ON CHARACTERISTICS
*Peak On-State Voltage
(ITM = " 6 A Peak)
*Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40°C)
All Quadrants
Gate Non–Trigger Voltage
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110°C)
All Quadrants
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = " 1 Adc) (TJ = –40°C)
Turn-On Time
(ITM = 14 Adc, IGT = 100 mAdc)
Gate Trigger Current (Continuous dc)
(1)
= 12
(TJ = 25°C)
=
Type
2N6071A
2N6075A
2N6071B
Symbol Min Typ Max Unit
I
DRM,
I
RRM
V
TM
V
GT
V
GD
I
H
t
gt
I
GT
@ T
J
+25°C 5 5 5 10
–40° C 20 20 20 30
+25° C 3 3 3 5
—
—
— — 2 Volts
— 1.4 2.5
0.2 — —
—
—
— 1.5 — µ s
I
mA
—
—
—
—
QUADRANT
(Maximum Value)
II
mA
10
2
30
15
III
mA
µ A
mA
Volts
Volts
mA
IV
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ V
Commutating di/dt = 2.0 A/ms
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
, TJ = 85° C, Gate Open, ITM = 5.7 A, Exponential Waveform,
DRM
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2N6075B
2
–40° C 15 15 15 20
dv/dt(c) — 5 — V/µ s
Page 3
2N6071A/B Series
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0 V
–V
EE
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
14
MC7400
4
7
VEE = 5.0 V
+
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
510
Ω
Voltage Current Characteristic of Triacs
(Bidirectional Device)
on state
I
at V
RRM
RRM
Quadrant 3
MainTerminal 2 –
V
TM
2N6071A
+ Current
I
H
LOAD
V
I
H
off state
TM
115 VAC
60 Hz
Quadrant 1
MainTerminal 2 +
I
at V
DRM
DRM
+ Voltage
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2N6071A/B Series
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II Quadrant I
(–) I
GATE
GT
MT1
REF
(+) I
GATE
(+) MT2
GT
MT1
REF
IGT – + I
(–) MT2
Quadrant III Quadrant IV
(–) I
GATE
GT
MT1
REF
(+) I
GATE
(–) MT2
GT
MT1
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
GT
SENSITIVE GATE LOGIC REFERENCE
IC Logic
Functions
TTL 2N6071A
HTL 2N6071A
CMOS (NAND) 2N6071B
CMOS (Buffer) 2N6071B
Operational
Amplifier
Zero Voltage
Switch
I II III IV
Series
2N6071A
Series
Firing Quadrant
Series
Series
Series
2N6071A
Series
2N6071A
Series
2N6071A
Series
2N6071B
Series
2N6071A
Series
2N6071B
Series
2N6071A
Series
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Page 5
2N6071A/B Series
110
°
100
α = 30°
90
80
C
T , CASE TEMPERATURE ( C)
70
α
α = CONDUCTION ANGLE
0 1.0 2.0
a
I
, AVERAGE ON-STATE CURRENT (AMP)
T(AV)
Figure 1. Average Current Derating Figure 2. RMS Current Derating
8.0
a
6.0
4.0
a
α = CONDUCTION ANGLE
α = 30 °
60°
60°
90°
90°
120°
120°
3.0
180°
180°
110
°
100
90
dc
80
C
T , CASE TEMPERATURE ( C)
α = CONDUCTION ANGLE
4.0
dc
70
0 1.0 2.0
8.0
6.0
α = CONDUCTION ANGLE
4.0
a
a
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
a
a
120°
α = 30°
120°
α = 180°
180°
3.0
60°
90°
dc
4.0
dc
2.0
(AV)
P , AVERAGE POWER (WATTS)
0
0 1.0 2.0
I
, AVERAGE ON-STATE CURRENT (AMP)
T(AV)
3.0 0
4.0
Figure 3. Power Dissipation Figure 4. Power Dissipation
3.0
OFF-STATE VOLTAGE = 12 Vdc
2.0 2.0
1.0
0.7
0.5
, GATE TRIGGER VOLTAGE (NORMALIZED)
GT
V
0.3
ALL MODES
140 120 100 80 60 40 20 0 –20 –40 –60
Figure 5. Typical Gate–Trigger Voltage Figure 6. Typical Gate–Trigger Current
2.0
(AV)
P , AVERAGE POWER (WATTS)
0
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
3.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.0
0.7
0.5
, GATE TRIGGER CURRENT (NORMALIZED)
GT
I
0.3
–60 –40 –20 0 20 40 60 80 100 140
TJ, JUNCTION TEMPERATURE (°C) T J, JUNCTION TEMPERATURE (°C)
60°
90°
30°
4.0 3.0 2.0 1.0
120
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2N6071A/B Series
40
30
20
10
7.0
5.0
3.0
2.0
, ON-STATE CURRENT (AMP)
TM
I
1.0
0.7
0.5
0.3
0.2
0.1
TJ = 110°C
TJ = 25°C
0 1.0 2.0 3.0 4.0 5.0
VTM, ON-STATE VOLTAGE (VOLTS)
3.0
2.0
1.0
0.7
0.5
, HOLDING CURRENT (NORMALIZED)
H
I
0.3
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
GATE OPEN
APPLIES TO EITHER DIRECTION
Figure 8. Typical Holding Current
34
32
30
28
26
24
22
20
18
PEAK SINE WA VE CURRENT (AMP)
16
14
TJ= –40 to +110°C
f = 60 Hz
1.0 2.0 3.0 4.0 5.0 7.0 10
NUMBER OF FULL CYCLES
Figure 7. Maximum On–State Characteristics
10
° C/W)
5.0
3.0
2.0
1.0
0.5
0.3
, TRANSIENT THERMAL IMPEDANCE (
0.2
θ JC(t)
0.1
Z
Figure 9. Maximum Allowable Surge Current
MAXIMUM
TYPICAL
0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
Figure 10. Thermal Response
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Page 7
2N6071A/B Series
P ACKAGE DIMENSIONS
TO–225AA
(formerly TO–126)
CASE 077–09
ISSUE W
–B–
–A–
K
F
M
U
Q
13 2
H
V
G
0.25 (0.010) B
S
D
2 PL
M
0.25 (0.010) B
A
C
J
R
M
M
A
M
M
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
__
Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 ––– 1.02 –––
STYLE 5:
PIN 1. MT 1
2. MT 2
3. GATE
MILLIMETERS INCHES
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2N6071A/B Series
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2N6071/D