Datasheet 2N6059, 2N6058 Datasheet (ON Semiconductor)

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SEMICONDUCTOR TECHNICAL DATA

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Order this document

by 2N6052/D



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. . . designed for general–purpose amplifier and low frequency switching applications.

• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc

• Collector–Emitter Sustaining Voltage — @ 100 mA V

CEO(sus)

V

CEO(sus)

• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

MAXIMUM RATINGS (1)

ОООООООООО

Collector–Emitter Voltage Collector–Base Voltage Emitter–Base voltage Collector Current — Continuous

ОООООООООО

Base Current Total Device Dissipation

@TC = 25_C

ОООООООООО

Derate above 25_C

Operating and Storage Junction

ОООООООООО

T emperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

= 80 Vdc (Min) — 2N6058

= 100 Vdc (Min) — 2N6052, 2N6059

Rating

Peak

Characteristic

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Symbol

V

CEO

V

CB

V

EB

I

C

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I

B

P

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TJ, T

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Symbol

5.0 12

20

0.2

150

0.857

Rating

2N6052

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2N6059

100 100

1.17

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Unit

Vdc Vdc Vdc Adc

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Adc

Watts

Î

W/_C

_

C

Î

Unit

_

C/W

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2N6058

80 80

ООООО

D

ООООО

–65 to +200_C

ООООО

R

stg

θJC



 

*Motorola Preferred Device

DARLINGTON

12 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80–100 VOL TS

150 WATTS

CASE 1–07

TO–204AA

(TO–3)



160 140 120 100

80 60 40

, POWER DISSIPATION (W ATTS)

D

P

20

0

0 25 50 75 100 125 150 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

 Motorola, Inc. 1998

Motorola Bipolar Power Transistor Device Data

175

1

2N6052

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*ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0) 2N6058

ООООООООООООООООООООО

2N6052, 2N6059

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) 2N6058

ООООООООООООООООООООО

(VCE = 50 Vdc, IB = 0) 2N6052, 2N6059

Collector Cutoff Current

(VCE = Rated V

ООООООООООООООООООООО

(VCE = Rated V

ООООООООООООООООООООО

Emitter Cutoff Current

ООООООООООООООООООООО

(VBE = 5.0 Vdc, IC = 0)

CEO CEO

, V , V

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TC = 150_C)

BE(off)

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 6.0 Adc, VCE = 3.0 Vdc)

ООООООООООООООООООООО

(IC = 12 Adc, VCE = 3.0 Vdc)

ООООООООООООООООООООО

Collector–Emitter Saturation Voltage

ООООООООООООООООООООО

(IC = 6.0 Adc, IB = 24 mAdc)

ООООООООООООООООООООО

(IC = 12 Adc, IB = 120 mAdc)

Base–Emitter Saturation Voltage

(IC = 12 Adc, IB = 120 mAdc)

ООООООООООООООООООООО

Base–Emitter On Voltage

(IC = 6.0 Adc, VCE = 3.0 Vdc)

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small–Signal Short Circuit Forward

ООООООООООООООООООООО

Current Transfer Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ООООООООООООООООООООО

Output Capacitance 2N6052

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6058/2N6059

Small–Signal Current Gain

ООООООООООООООООООООО

(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

*Indicates JEDEC Registered Data. (1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CEX

ÎÎÎ

I

EBO

ÎÎÎ

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(sat)

ÎÎÎ

V

BE(on)

|hfe|

ÎÎÎ

C

ob

h

fe

ÎÎÎ

Min

ÎÎ

80

100

ÎÎ

—

ÎÎ

—

ÎÎ

—

ÎÎ

750 100

ÎÎ

—

ÎÎ

— —

ÎÎ

—

4.0

ÎÎ

— —

300

ÎÎ

Max

ÎÎ

— —

ÎÎ

1.0

ÎÎ

1.0

0.5

ÎÎ

5.0

ÎÎ

2.0

ÎÎ

18,000

—

ÎÎ

2.0

ÎÎ

3.0

4.0

ÎÎ

2.8

—

ÎÎ

500 300

—

ÎÎ

Unit

Vdc

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mAdc

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mAdc

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mAdc

ÎÎ

—

ÎÎ

Vdc

ÎÎ

Vdc

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Vdc

MHz

ÎÎ

pF

—

ÎÎ

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVER Y TYPE, eg:

1N5825 USED ABOVE IB MSD6100 USED BELOW IB

V

2

approx +8.0 V

0

V

1

approx –8.0 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

25

≈

100 mA

≈

100 mA

51

µ

s

for td and tr, D1 is disconnected and V2 = 0

R

B

D

1

+4.0 V

≈

5.0 k

TUT

≈

For NPN test circuit reverse diode and voltage polarities.

Figure 2. Switching Times Test Circuit

2

50

R

V

–30 V

C

CC

SCOPE

µ

t, TIME ( s)

10

5.0 t

s

2.0

t

f

1.0

t

BE(off)

r

= 0

0.5

td @ V

0.2

0.1

0.2

0.5 1.0 3.0 20

5.0 10

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

Motorola Bipolar Power Transistor Device Data

2N6052 2N6059

VCC = 30 V IC/IB = 250 IB1 = I

B2

°

C

TJ = 25

1.0

0.7

0.5

2N6052

D = 0.5

0.3

0.2

0.1

0.07

0.05

0.03

RESISTANCE (NORMALIZED)

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

50 20

10

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMP)

0.2

C

I

0.1

0.05 10

0.2

0.1

0.05

0.02

SINGLE PULSE

0.01

0.02 0.03 0.3 3.0 30 300

TJ = 200°C

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

0.01

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

0.5 ms

1.0 ms

5.0 ms

SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION

@TC = 25

°

C (SINGLE PULSE)

20 30

R

(t) = r(t) R

θ

JC

R

θ

JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

t, TIME (ms)

θ

= 1.17°C/W MAX

– TC = P

JC

1

(pk)

θJC(t)

Figure 4. Thermal Response

ACTIVE–REGION SAFE OPERATING AREA

0.1 ms

dc

50 10070

50 20

10

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMP)

0.2

C

I

0.1

0.05 10

0.5 ms

TJ = 200°C

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

1.0 ms

5.0 ms

SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION

@TC = 25

°

C (SINGLE PULSE)

20 30

50 10070

2

0.1 ms

dc

Figure 5. 2N6058

Figure 6. 2N6052, 2N6059

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figures 5, 6 and 7 is based on T limits are valid for duty cycles to 10% provided T

= 200_C; TC is variable depending on conditions. Second breakdown pulse

J(pk)

v 200_C; T

J(pk)

may be calculated from the data in Figure 4. At high case

J(pk)

temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

C, CAPACITANCE (pF)

500

300

200

100

70

50

0.1

C

ib

2N6052 2N6058/2N6059

1.0 2.0 1005.00.2 0.5

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Capacitance

TJ = 25°C

C

ob

10 20 50

3000 2000

1000

500

200

100

, SMALL–SIGNAL CURRENT GAIN

fe

h

50 30

1.0

TC = 25°C VCE = 3.0 V IC = 5.0 A

2N6052 2N6058/2N6059

2.0 5.0 20 50 100010010 f, FREQUENCY (kHz)

200 500

Figure 7. Small–Signal Current Gain

Motorola Bipolar Power Transistor Device Data

3

2N6052

20,000

10,000

5000 3000

2000

1000

, DC CURRENT GAIN

FE

h

500 300

200

3.0

2.6

2.2

PNP

2N6052

VCE = 3.0 V

TJ = 150°C

25°C

–55°C

0.2

0.3 0.5 1.0 2.0 20 IC, COLLECTOR CURRENT (AMP)

3.0 5.0

10

Figure 9. DC Current Gain

TJ = 25°C

IC = 3.0 A

6.0 A

9.0 A

12 A

40,000 20,000

10,000

6,000 4,000

2,000

, DC CURRENT GAIN

FE

h

1,000

600 400

NPN

2N6058, 2N6059

TJ = 150°C

25°C

–55°C

0.2

0.3 0.5 1.0 2.0 2010 IC, COLLECTOR CURRENT (AMP)

3.0 TJ = 25°C

2.6

IC = 3.0 A 6.0 A 9.0 A 12 A

2.2

3.0 5.0

VCE = 3.0 V

, COLLECTOR–EMITTER VOL TAGE (VOLTS)

CE

V

V, VOLTAGE (VOLTS)

1.8

1.4

1.0

0.5

1.0 2.0 10 50

3.0

5.0

IB, BASE CURRENT (mA)

Figure 10. Collector Saturation Region

3.0 TJ = 25°C

2.5

2.0

V

@ IC/IB = 250

BE(sat)

1.5

VBE @ VCE = 3.0 V

1.0

V

@ IC/IB = 250

0.5

0.2

0.3 0.5 1.0 3.0 20

CE(sat)

2.0

IC, COLLECTOR CURRENT (AMP)

1.8

1.4

, COLLECTOR–EMITTER VOL TAGE (VOLTS)

CE

V

20

30

105.0

1.0

0.5 1.0 2.0 10 505.0 203.0 30

3.0

2.5

2.0

1.5

V, VOLTAGE (VOLTS)

1.0

0.5

0.2 0.3 0.5 1.0 3.0 20

Figure 11. “On” Voltages

TJ = 25°C

V

BE(sat)

IB, BASE CURRENT (mA)

@ IC/IB = 250

VBE @ VCE = 3.0 V

V

CE(sat)

2.0 105.0

IC, COLLECTOR CURRENT (AMP)

@ IC/IB = 250

4

Motorola Bipolar Power Transistor Device Data

2N6052

P ACKAGE DIMENSIONS

A

N

C

E

2 PLD

0.13 (0.005) Y

U

V

H

L

2

1

G

K

M

–Y–

–T–

B

T

SEATING PLANE

M

Q

M

–Q–

0.13 (0.005) T

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF B ––– 1.050 ––– 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19

L 0.665 BSC 16.89 BSC N ––– 0.830 ––– 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

Motorola Bipolar Power Transistor Device Data

5

2N6052

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Motorola Bipolar Power Transistor Device Data

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2N6052/D

Datasheet 2N6059, 2N6058 Datasheet (ON Semiconductor)

Specifications and Main Features

Frequently Asked Questions

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