Datasheet 2N6059, 2N6058, 2N6057, 2N6052, 2N6051 Datasheet (COMST)

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PPOOWWEERR CCOOMMPPLLEEMMEENNTTAARRY SSIILLIICCOONN TTRRAANNSSIISSTTOORRS

The 2N6050, 2N6051 and 2N6052 are silicon epitaxialbase PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respective ly.

9

Y

S

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings Value Unit

2N6050 2N6057

60

V

CBO

CEO

CEX

Collector-Base Voltage

Collector-EmitterVoltage

I

=0

E

I

=0

B

V

BE

=-1.5 V

2N6051 2N6058

2N6052 2N6059

2N6050 2N6057

2N6051 2N6058

2N6052 2N6059

2N6050 2N6057

2N6051 2N6058

2N6052 2N6059

80

100

60

80

100

60

80

100

V

COMSET SEMICONDUCTORS 1/4

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2

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V

EBO

I

C

I

CM

I

B

P

T

J Ts

9

Emitter-Base Voltage

Collector Current

Collector Peak Current

Base Current

Power Dissipation @ TC < 25°

Junction Storage Temperature

2N6050 2N6057

I

=0

C

2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059

5.0 V

12

20

0.2

150 Watts

200

-65 to +200

A

mA

°C

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

2N6050 2N6057

R

thJ-C

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Thermal Resistance, Junction to Case

2

COMSET SEMICONDUCTORS 2/4

2N6051 2N6058 2N6052 2N6059

1.17 °C/W

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2

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9

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol Ratings

I

CEX

Collector Cutoff Current

VCE= V

V

= V

CE

T

=150°C

C

Test Condition(s)

CEX VBE

=-1.5 V

2N6050 2N6057

2N6051 2N6058

2N6052 2N6059

2N6050 2N6057 2N6051 2N6058 2N6052 2N6059

Min Typ Mx Unit

--

500

µ

A

5mA

I

CEO

I

EBO

V

CEO(SUS)

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Sustaining Voltage (*)

VCE=30 Vdc, IB=0

VCE=40 Vdc, IB=0

VCE=50 Vdc, IB=0

VEB=5 V

IC=0.1 A

2N6050 2N6057

2N6051 2N6058

2N6052 2N6059

2N6050 2N6057

2N6051 2N6058

2N6052 2N6059

2N6050 2N6057

2N6051 2N6058

2N6052 2N6059

--

60 - -

80 - -

100 - -

1.0 mA

2.0 mA

V

COMSET SEMICONDUCTORS 3/4

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V

CE(SAT)

V

BE(SAT)

V

BE(ON)

f

T

h

FE

9

Collector-Emitter saturation Voltage (*)

Base-Emitter Saturation Voltage (*)

Base-Emitter Voltage (*)

Transition Frequency

DC Current Gain (*)

IC=6 A, IB=24 mA

IC=12 A, IB=120 mA

IC=6 A, VCE=3 V

IC=5 A, VCE=3 V, f=1 MHz

VCE=3 V, IC=6.0 A

VCE=3.0 V, IC=12 A

2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059

--2.0

V

--3.0

--4V

--2.8V

4

750

100

--

-- -

--

MHz

! ! ! For PNP types current and voltage values are negative ! ! !

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

COMSET SEMICONDUCTORS 4/4