Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6055 2N6056
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·DARLINGTON
·Complement to type 2N6053;2N6054
APPLICATIONS
·General-purpose power amplifier and low
frequency swithing applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 16 A
IB Base current 120 mA
PD Total Power Dissipation TC=25℃ 100 W
Tj Junction temperature 200 ℃
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
2N6055 60
2N6056
2N6055 60
2N6056
Open emitter
Open base
80
V
V
80
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.75 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6055 2N6056
CHARACTERISTICS
Tm=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter
sustaining voltage
2N6056
IC=0.1 A ;IB=0
V
80
Collector-emitter saturation voltge IC=4A ;IB=16mA 2.0 V
Collector-emitter saturation voltage IC=8A ;IB=80mA 3.0 V
Base-emitter saturation voltage IC=8A ;IB=80mA 4.0 V
VBE Base-emitter on voltage IC=4A ; VCE=3V 2.8 V
2N6055 VCE=30V; IB=0
2N6055 60
I
Collector cut-off current
CEO
0.5 mA
2N6056 VCE=40V; IB=0
=60V; V
V
2N6055
I
Collector cut-off current
CEX
2N6056
I
Emitter cut-off current VEB=5V; IC=0 2.0 mA
EBO
CE
TC=150℃
VCE=80V; V
=150℃
T
C
BE(off)
BE(off)
=1.5V
=1.5V
0.5
5.0
mA
0.5
5.0
h
DC current gain IC=4A ; VCE=3V 750 18000
FE-1
h
DC current gain IC=8A ; VCE=3V 100
FE-2
Cob Output capacitance IE=0;VCB=10V;f=0.1MHz 220 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N6055 2N6056
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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