Datasheet 2N6052G Datasheet (ON Semiconductor)

2N6052

Preferred Device

Darlington Complementary
Silicon Power Transistors

This package is designed for general−purpose amplifier and low

frequency switching applications.

Features

• High DC Current Gain — h

= 3500 (Typ) @ IC = 5.0 Adc

FE

• Collector−Emitter Sustaining Voltage — @ 100 mA

V

CEO(sus)

= 100 Vdc (Min)

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• This is a Pb−Free Device*

MAXIMUM RATINGS (Note 1)

Rating

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous

Peak

Base Current I

Total Power Dissipation @ TC = 25°C
Derate above 25°C

Operating and Storage Temperature
Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

Symbol Value Unit

CEO

I

P

TJ, T

R

q

CB

EB

C

B

D

stg

JC

100 Vdc

100 Vdc

5.0 Vdc

12
20

0.2 Adc

150

0.857

−65 to +200 °C

1.17 °C/W

Adc

W

W/°C

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12 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTOR

100 VOLTS, 150 WATTS

COLLECTOR
CASE

BASE

1

EMITTER 2

MARKING
DIAGRAM

1

2

TO−204AA (TO−3)

CASE 1−07

STYLE 1

2N6052G

AYYWW

MEX

160

140

120

100

80

60

40

, POWER DISSIPATION (WATTS)

D

P

20

0

0 25 50 75 100 125 150 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 5

175

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

2N6052 = Device Code
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin

ORDERING INFORMATION

Device Package Shipping

2N6052G TO−3

(Pb−Free)

100 Units/Tray

2N6052/D

2N6052

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted) (Note 2)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0)

Collector Cutoff Current (VCE = 50 Vdc, IB = 0)

Collector Cutoff Current

(V

CE

= Rated V

= Rated V

CE

, V

CEO

BE(off)

, V

BE(off)

= 1.5 Vdc)

CEO

= 1.5 Vdc, TC = 150_C)

(V

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 3)

DC Current Gain

(I

= 6.0 Adc, VCE = 3.0 Vdc)

C

(IC = 12 Adc, VCE = 3.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 6.0 Adc, IB = 24 mAdc)

(I

= 12 Adc, IB = 120 mAdc)

C

Base−Emitter Saturation Voltage (IC = 12 Adc, IB = 120 mAdc)

Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 3.0 Vdc)

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small−Signal Short Circuit Forward
Current Transfer Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Small−Signal Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

2. Indicates JEDEC Registered Data.

3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Symbol

V

CEO(sus)

I

CEO

I

CEX

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE(on)

|hfe|

C

ob

h

fe

Min

100

−

−

−

−

750
100

−

−

−

−

4.0

−

300

Max

−

1.0

0.5

5.0

2.0

18,000

−

2.0

3.0

4.0

2.8

−

500

−

Unit

Vdc

mAdc

mAdc

mAdc

−

Vdc

Vdc

Vdc

MHz

pF

−

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D

MUST BE FAST RECOVERY TYPE, eg:

1

1N5825 USED ABOVE I
MSD6100 USED BELOW I

V

2

approx
+8.0 V

0

V

1

approx

-8.0 V

, tf ≤ 10 ns

t

r

DUTY CYCLE = 1.0%

25 ms

≈ 100 mA

B

≈ 100 mA

B

R

51

for td and tr, D1 is disconnected
and V

= 0

2

B

D

1

+4.0 V

≈ 5.0 k

For NPN test circuit reverse diode and voltage polarities.

Figure 2. Switching Times Test Circuit

TUT

≈ 50

R

V

-30 V

C

CC

10

2N6052

SCOPE

5.0

2.0

t

s

t

f

2N6059

1.0

BE(off)

t

r

= 0

5.0 10

VCC = 30 V

= 250

I

C/IB

= I

I

B1

B2

TJ = 25°C

t, TIME (s)μ

0.5

td @ V

0.2

0.1

0.2

0.5 1.0 3.0 20
IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

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2

1.0

0.7

0.5

2N6052

D = 0.5

0.3

0.2

0.1

0.07

0.05

0.03

RESISTANCE (NORMALIZED)

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

0.2

0.1

0.05

0.02

SINGLE

PULSE

0.01

0.02 0.03 0.3 3.0 30 300

0.01

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

Figure 4. Thermal Response

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

C

− V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figures 5, and 6 is based on T
T

is variable depending on conditions. Second breakdown

C

J(pk)

= 200_C;

pulse limits are valid for duty cycles to 10% provided

v 200_C; T

T

J(pk)

may be calculated from the data in

J(pk)

Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

R

(t) = r(t) R

q

JC

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME (ms)

q

= 1.17°C/W MAX

- TC = P

JC

(pk) qJC

ACTIVE−REGION SAFE OPERATING AREA

50

20

10

5.0

2.0

1.0

TJ = 200°C

0.5

, COLLECTOR CURRENT (AMP)

0.2

C

I

0.1

0.05
10

P

(pk)

t

1

(t)

0.5 ms

1.0 ms

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION
@T

= 25°C (SINGLE PULSE)

C

20 30

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1

t

2

DUTY CYCLE, D = t1/t

5.0 ms

50 10070

2

0.1 ms

Figure 5.

d

c

3000
2000

1000

500

200

100

, SMALL-SIGNAL CURRENT GAIN

fe

h

50

30

1.0

TC = 25°C
V

= 3.0 V

CE

= 5.0 A

I

C

2.0 5.0 20 50 100010010
f, FREQUENCY (kHz)

200 500

Figure 6. Small−Signal Current Gain

500

300

200

100

C, CAPACITANCE (pF)

70

50

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3

0.1

C

ib

1.0 2.0 1005.00.2 0.5

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

TJ = 25°C

C

ob

10 20 50

20,000

10,000

5000

3000

2000

2N6052

VCE = 3.0 V

TJ = 150°C

25°C

1000

, DC CURRENT GAIN

FE

h

500

300
200

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

-55°C

0.3 0.5 1.0 2.0 20

0.2

IC, COLLECTOR CURRENT (AMP)

3.0 5.0

Figure 8. DC Current Gain

3.0
TJ = 25°C

2.6

2.2

1.8

1.4

1.0

0.5

IC = 3.0 A

1.0 2.0 10 50

6.0 A

3.0

, BASE CURRENT (mA)

I

B

9.0 A

5.0

Figure 9. Collector Saturation Region

10

12 A

20

30

V, VOLTAGE (VOLTS)

3.0

TJ = 25°C

2.5

2.0

V

@ IC/IB = 250

1.5

1.0

0.5

BE(sat)

VBE @ VCE = 3.0 V

V

@ IC/IB = 250

CE(sat)

0.2

0.3 0.5 1.0 3.0 20

I

, COLLECTOR CURRENT (AMP)

C

2.0

Figure 10. “On” Voltages

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4

105.0

2N6052

PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

A

N

C

E

D

2 PL

0.13 (0.005) Y

U

V

H

L

2

1

G

K

M

−Y−

−T−

B

T

SEATING
PLANE

M

Q

M

−Q−

0.13 (0.005) T

M

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77

G 0.430 BSC 10.92 BSC

H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08

Q 0.151 0.165 3.84 4.19

U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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2N6052/D

5