Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6049
DESCRIPTION
·With TO-66 package
·Complement to type 2N3054A
APPLICATIONS
·Designed for general purpose switching
and amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -4 A
ICM Collector current-peak -10 A
IB Base current -2 A
PD Power dissipation TC=25℃ 75 W
Tj Junction temperature 200 ℃
Collector-base voltage Open emitter -90 V
Collector-emitter voltage Open base -55 V
Emitter-base voltage Open collector -7 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 2.33
th j-C
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6049
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
Collector-emitter sustaining voltage IC=-0.1A ; IB=0 -55 V
Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -0.5 V
Collector-emitter saturation voltage IC=-4A; IB=-0.8A -2.0 V
VBE Base -emitter on voltage IC=-0.5A ; VCE=-4V -1.0 V
V
=-90V;V
I
Collector cut-off current
CEX
I
Collector cut-off current VCE=-30V; IB=0 -0.5 mA
CEO
I
Emitter cut-off current VEB=-7V; IC=0 -1.0 mA
EBO
h
DC current gain IC=-0.5A ; VCE=-4V 25 100
FE-1
h
DC current gain IC=-3A ; VCE=-4V 6
FE-2
CE
=150℃
T
C
BE(off)
=-1.5V
-1.0
-6.0
mA
COB Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 200 pF
fT Transition frequency IC=-0.2A ; VCE=-10V;f=1MHz 3.0
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N6049
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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