Datasheet 2N6045G Specification

Page 1

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045

Plastic Medium-Power Complementary Silicon Transistors

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

Features

• High DC Current Gain − h

• Collector−Emitter Sustaining Voltage − @ 100 mAdc −

CEO(sus)

= 100 Vdc (Min) − 2N6042, 2N6045

= 60 Vdc (Min) − 2N6040, 2N6043

• Low Collector−Emitter Saturation Voltage −

V = 2.0 Vdc (Max) @ I

= 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44

CE(sat)

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage 2N6040

Collector−Base Voltage 2N6040

Emitter−Base Voltage V Collector Current Continuous

Base Current I Total Power Dissipation @ TC = 25°C

Derate above 25°C Operating and Storage Junction

Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Indicates JEDEC Registered Data.

= 2500 (Typ) @ IC = 4.0 Adc

= 3.0 Adc − 2N6042, 2N6045

2N6043 2N6042 2N6045

Peak

CEO

TJ, T

EB C

stg

100

5.0 Vdc

8.0 16

120 mAdc

0.60

–65 to +150 °C

Vdc

Adc

W/°C

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DARLINGTON, 8 AMPERES

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 − 100 VOLTS, 75 WATTS

TO−220

CASE 221A

STYLE 1

MARKING DIAGRAM

2N604xG

AYWW

2N604x = Device Code

x = 0, 2, 3, or 5 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

November, 2014 − Rev. 10

1 Publication Order Number:

2N6040/D

Page 2

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

ÎÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient

Symbol

Max

1.67 57

Unit

°C/W °C/W

*ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0) 2N6040, 2N6043

2N6042, 2N6045

Collector Cutoff Current

= 60 Vdc, IB = 0) 2N6040, 2N6043

= 100 Vdc, IB = 0) 2N6042, 2N6045

Collector Cutoff Current

= 60 Vdc, V

(VCE = 100 Vdc, V (VCE = 60 Vdc, V (V

= 80 Vdc, V

(VCE = 100 Vdc, V

= 1.5 Vdc) 2N6040, 2N6043

BE(off)

= 1.5 Vdc) 2N6042, 2N6045

BE(off)

= 1.5 Vdc, TC = 150°C) 2N6040, 2N6043

BE(off)

= 1.5 Vdc, TC = 150°C) 2N6041, 2N6044

BE(off)

= 1.5 Vdc, TC = 150°C) 2N6042, 2N6045

BE(off)

Collector Cutoff Current

= 60 Vdc, IE = 0) 2N6040, 2N6043

(VCB = 100 Vdc, IE = 0) 2N6042, 2N6045

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) I

CEO(sus)

CEO

CEX

CBO

EBO

100

−

20 20

20 200 200 200

− 2.0 mAdc

Vdc

ON CHARACTERISTICS

DC Current Gain

(IC = 4.0 Adc, VCE = 4.0 Vdc) 2N6040, 2N6043, (IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6042, 2N6045 (IC = 8.0 Adc, VCE = 4.0 Vdc) All Types

Collector−Emitter Saturation Voltage

= 4.0 Adc, IB = 16 mAdc) 2N6040, 2N6043,

(IC = 3.0 Adc, IB = 12 mAdc) 2N6042, 2N6045 (IC = 8.0 Adc, IB = 80 Adc) All Types

Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) V Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) V

CE(sat)

BE(sat)

BE(on)

1000 1000

100

20.000 20,000

−

2.0

4.0

− 4.5 Vdc

− 2.8 Vdc

−

Vdc

DYNAMIC CHARACTERISTICS

Small Signal Current Gain (I Output Capacitance 2N6040/2N6042

= 10 Vdc, IE = 0, f = 0.1 MHz) 2N6043/2N6045

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) h

= 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |hfe| 4.0 −

−

300 − −

300 200

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data.

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Page 3

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

0 0

4.0

3.0

2.0

1.0

, POWER DISSIPATION (WATTS)

0 20 40 60 80 100 120 160

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE I MSD6100 USED BELOW I

approx +8.0 V

approx

-12 V

, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

≈ 100 mA

for td and tr, D1 is disconnected and V

= 0

For NPN test circuit reverse all polarities and D1.

≈ 8.0 k

+4.0 V

T, TEMPERATURE (°C)

Figure 1. Power Derating

5.0

t, TIME (s)μ

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.1

TUT

≈120

-30 V

SCOPE

140

VCC = 30 V

= 250

C/IB

= I

TJ = 25°C

PNP NPN

td @ V

BE(off)

= 0 V

0.2 0.3 0.5 0.7 1.0 2.0 3.0 1 IC, COLLECTOR CURRENT (AMP)

5.0 7.0

Figure 2. Switching Times Equivalent Circuit

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

0.03

r(t), EFFECTIVE TRANSIENT

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.2

0.1

0.05

0.02

SINGLE PULSE

0.02 0.03 0.3 3.0 30 300

0.01

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100

qJC(t) = r(t) q

qJC = 1.67°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

- TC = P

J(pk)

(pk) qJC

t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

Figure 3. Switching Times

(pk)

(t)

DUTY CYCLE, D = t1/t

500

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Page 4

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

5.0

2.0

1.0

0.5

0.2

0.1

, COLLECTOR CURRENT (AMP)

0.05

0.02

1.0

TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ T (SINGLE PULSE) SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED V

2.0 3.0 7.0 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

500 ms

1.0ms

5.0ms

10 20 30

= 25°C

CEO

2N6040, 2N6043

2N6045

100 ms

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

− V

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150°C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T < 150°C. T

may be calculated from the data in Figure 4.

J(pk)

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

Figure 5. Active−Region Safe Operating Area

10,000

5000

AIN

3000 2000

1000

URRENT

500 300

NAL I

200

100

MALL-

1.0

2.0 5.0 20 50 100010010

TC = 25°C

= 4.0 Vdc

= 3.0 Adc

PNP NPN

200 500

f, FREQUENCY (kHz)

Figure 6. Small−Signal Current Gain

300

200

100

C, CAPACITANCE (pF)

PNP NPN

0.5 1.0 2.0 VR, REVERSE VOLTAGE (VOLTS)

5.00.1 0.2

Figure 7. Capacitance

10 20

TJ = 25°C

100

PNP 2N6040, 2N6042

20,000

10,000

7000 5000

TJ = 150°C 3000 2000

1000

, DC CURRENT GAIN

700

500

300 200

0.1

VCE = 4.0 V

25°C

-55°C

0.2 0.3 0.5 1.0 2.0 10

IC, COLLECTOR CURRENT (AMP)

0.7 7.0

3.0 5.0

NPN 2N6043, 2N6045

20,000

10,000

7000 5000

TJ = 150°C

3000 2000

1000

, DC CURRENT GAIN

700

500

300 200

0.1

VCE = 4.0 V

25°C

-55°C

0.2 0.3 0.5 1.0 2.0 100.7 7.0

, COLLECTOR CURRENT (AMP)

3.0 5.0

Figure 8. DC Current Gain

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Page 5

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0

2.6

2.2

1.8

1.4

1.0

3.0

2.5

2.0

IC = 2.0 A

0.3

0.5 1.0 2.0 10 30

0.7 5.0 20

4.0 A

3.0 7.0

6.0 A

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

TJ = 25°C

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0

2.6

2.2

1.8

1.4

1.0

3.0

2.5

2.0

IC = 2.0 A

0.3

0.5 1.0 2.0 10 30

0.7 5.0 20

4.0 A

, BASE CURRENT (mA)

6.0 A

3.0 7.0

TJ = 25°C

1.5

VBE @ VCE = 4.0 V

V, VOLTAGE (VOLTS)

@ IC/IB = 250

1.0

0.5

0.1

BE(sat)

@ IC/IB = 250

CE(sat)

0.2 0.3 0.5 0.7 1.0 3.0 10

2.0

7.05.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

ORDERING INFORMATION

Device Package Shipping

2N6040G TO−220

2N6042G TO−220

2N6043G TO−220

2N6045G TO−220

(Pb−Free)

@ IC/IB = 250

1.5

V, VOLTAGE (VOLTS)

BE(sat)

VBE @ VCE = 4.0 V

1.0 V

@ IC/IB = 250

CE(sat)

0.5

0.1 0.2 0.3 0.5 0.7 1.0 3.0 10

, COLLECTOR CURRENT (AMP)

2.0 7.05.0

50 Units / Rail

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Page 6

PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

−T−

PLANE

123

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 D 0.025 0.038 0.64 0.96

F 0.142 0.161 3.61 4.09 G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 J 0.014 0.024 0.36 0.61 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

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2N6040/D