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UNISONIC TECHNOLOGIES CO., LTD
2N60
2 Amps, 600 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (Crss = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
= 3.8Ω@VGS = 10V.
DS(ON)
Power MOSFET
1
1
1
1
*Pb-free plating product number: 2N60L
TO- 251
TO-252
TO-220
TO-220F
SYMBOL
2.Dra in
1.Gate
3.So urce
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating
2N60-TA3-T 2N60L-TA3-T TO-220 G D S Tube
2N60-TF3-T 2N60L-TF3-T TO-220F G D S Tube
2N60-TM3-T 2N60L-TM3-T TO-251 G D S Tube
2N60-TN3-R 2N60L-TN3-R TO-252 G D S Tape Reel
2N60-TN3-T 2N60L-TN3-T TO-252 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
2N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
Package
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn
1 2 3
Packing
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2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (
T
= 25℃, unless otherwise specified)
C
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V
600 V
DSS
±30 V
GSS
Avalanche Current (Note 2) IAR 2.0 A
Drain Current Continuous
TC = 25°C 2.0 A
= 100°C
T
C
I
D
1.26 A
Drain Current Pulsed (Note 2) IDP 8.0 A
Avalanche Energy
Repetitive(Note 2) EAR 4.5 mJ
Single Pulse(Note 3) E
140 mJ
AS
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Total Power Dissipation
TC = 25°C
Derate above 25°C
Junction Temperature T
Storage Temperature T
PD
+150 ℃
J
-55 ~ +150 ℃
STG
45 W
0.36 W/℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, I
4. I
≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BV
SD
=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
THERMAL DATA
PARAMETER PACKAGE SYMBOL RATINGS UNIT
TO-251 112
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
TO-252 112
TO-220 54
TO-220F
TO-251 12
TO-252 12
TO-220 4
TO-220F
θJA
θJc
54
4
℃/W
ELECTRICAL CHARACTERISTICS
(T
=25℃, unless Otherwise specified.)
J
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate-Body Leakage Current
Breakdown Voltage Temperature
Forward VGS = 30V, VDS = 0V 100 nA
Reverse
△BV
Coefficient
DSSVGS
DSS
I
GSS
DSS
T△
J
= 0V, ID = 250µA 600 V
VDS = 600V, VGS = 0V 10 µA
= 480V, TC = 125°C 100 µA
V
DS
= -30V, VDS = 0V -100 nA
V
GS
/
I
= 250 µA 0.4 V/℃
D
On Characteristics
Gate Threshold Voltage V
Static Drain-Source On-Resistance R
GS(TH)VDS
DS(ON)VGS
= VGS, ID = 250µA 2.0 4.0 V
= 10V, ID =1A 3.8 5 Ω
Forward Transconductance gFS VDS = 50V, ID = 1A (Note 1) 2.25 S
Dynamic Characteristics
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
270 350 pF
ISS
V
=25V, V
40 50 pF
OSS
RSS
DS
=0V, f =1MHz
GS
5 7 pF
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2N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Switching Characteristics
Turn-On Delay Time t
Rise Time tR 25 60 ns
Turn-Off Delay Time t
Fall Time tF
Total Gate Charge QG 9.0 11 nC
Gate-Source Charge QGS 1.6 nC
Gate-Drain Charge QGD
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V
Continuous Drain-Source Current ISD 2.0 A
Pulsed Drain-Source Current ISM 8.0 A
Reverse Recovery Time tRR 180 ns
Reverse Recovery Charge QRR
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
10 30 ns
D (ON)
=300V, ID =2.4A, RG=25Ω
V
DD
(Note 1,2)
20 50 ns
D(OFF)
25 60 ns
V
=480V, VGS=10V, ID=2.4A
DS
(Note 1, 2)
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/µs (Note1)
4.3 nC
0.72 µC
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2N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
R
G
V
GS
Same Type
as D. U. T.
+
V
DS
-
L
Driver
* dv/dt controlled by R
G
V
DD
* ISD controlled by pulse period
* D.U.T.-Device Under Test
V
GS
(Driver)
I
SD
(D.U.T.)
V
DS
(D.U .T.)
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P.W.
, Body Diode Forward Current
I
FM
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
D=
P. W.
Period
di/dt
VGS=
10V
V
DD
Body Diode Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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2N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
D.U.T.
V
DD
R
10V
Pulse W idth ≤ 1μs
Duty Factor ≤0.1%
V
DS
V
GS
G
Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms
Same Type
as D.U.T.
V
DS
12V
0.2μF
V
50kΩ
0.3μF
GS
V
DS
90%
10%
V
GS
t
D(O N )
t
R
t
D(OFF)
t
F
Q
10V
Q
GS
G
Q
GD
DUT
V
3mA
G
Charge
Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
R
10V
D
D.U.T.
t
p
V
DD
I
AS
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
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2N60
TYPICAL CHARACTERISTICS
(A)
D
10
10
V
Top: 15.0 V
10 .0V
0
8 .0 V
7 .0 V
6 .5 V
6 .0 V
-1
On-Region Characteristics
GS
Bottorm :
5.5 V
VDS=50V
250μs Pulse Test
(A)
D
0
10
Transfer Characteristics
85℃
25℃
Power MOSFET
-20℃
Dra in Cur re nt , I
Drain Current, I
250μs Pulse Test
10
=25℃
T
-2
10
-1
10
0
C
1
10
Drain-Source Voltage, VDS(V)
10
-1
2
46 810
Gate-Source Voltage, V
(V)
GS
On-Resistance Variation vs. Drain Current and
Gate Voltage
12
TJ=25℃
(Ω)
10
DS(ON)
VGS=10V
VGS=20V
8
6
4
2
0
Drain-Source On-Resistance, R
0
1
3456
2
Drain Current, ID(A)
Body Diode Forward Voltage Variation vs.
Source Current and Temperature
VGS=0V
250μs Pulse Test
(A)
DR
0
10
125℃
25℃
Reverse Drain Current, I
-1
10
0.2
0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Voltage, V
1.6
(V)
SD
Capacitance vs. Drain-Source Voltage
Gate Charge vs. Gate Charge Voltage
500
C
iss=CGS+CGD
(CDS=shorted)
C
iss
oss=CDS+CGD
C
rss=CGD
400
C
300
C
oss
200
Capacitance (pF)
C
100
rss
VGS=0V
f = 1MH z
0
-1
10
Drain-Source Voltage, V
UNISONIC TECHNOLOGIES CO., LTD
10
0
10
DS
1
(V)
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12
VDS=120V
10
(V)
GS
8
VDS=300V
VDS=480V
6
4
2
Gate-Source Voltage, V
0
0
2
4
61
ID=2.4A
8
0
Total Gate Charge, QG(nC)
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2N60
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage vs. Temperature
On-Resistance vs. Temperature
Power MOSFET
1.2
VGS=10V
I
=250μA
D
3.0
2.5
VGS=10V
I
=4.05A
D
1.1
2.0
1.0
(Normalized)
DSS
V
0.9
Drain-Source Breakdown Voltage,
0.8
-50 50 200
-100
0
100 150
Junction Temperature, T
J
(℃)
1.5
(Normalized)
1. 0
DS( O N)
R
0.5
Drain-Source On-Resistance,
0.0
J
(℃)
200
-50 50
-100
0
100 150
Junction Temperature, T
Max. Drain Current vs. Case Temperature
2.0
1.5
(A)
D
1.0
Drain Current, I
0.5
0.0
75
100
Case Temperature, T
C
(℃)
1255025
150
10
(A)
D
10
Drain Current, I
10
10
Max. Safe Operating Area
Operation in This Area
is Limited by R
1
0
-1
T
=25℃
C
T
=125℃
J
Single Pulse
-2
10
0
10
Drain-Source Voltage, VDS(V)
DS(on)
100μs
10μs
1ms
10m
s
D
C
1
10
2
10
3
Thermal Response
(t)
D=0.5
JC
0
10
θ
0.2
0.1
θ
(t) = 2.78℃/W Max.
JC
Duty Factor, D=t1/t2
T
JM-TC=PDM×θJC
(t)
0.05
0.02
-1
10
0.01
Thermal Response,
Single pulse
P
DM
t1
t2
0
-5
10
10-410-310-210
Square Wave Pulse Duration, t1(s)
-1
10
10
1
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2N60
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Power MOSFET
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