Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5972
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High power dissipations
APPLICATIONS
·Designed for general-purpose power
amplifier and switching applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
ICM Collector current-peak 30 A
IB Base current 5 A
PD Total Power Dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
150 W
℃
T
Storage temperature -65~200
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.1
th j-c
℃
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5972
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
I
CEO
I
CEV
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A;VCE=10V 4 MHz
Collector-emitter sustaining voltage IC=0.1A ;IB=0 80 V
Collector-emitter saturation voltge IC=7A ;IB=0.7A 1.0 V
Collector-emitter saturation voltage IC=15A; IB=3.75A 4.0 V
Base-emitter saturation voltage IC=15A; IB=3.75A 2.5 V
Collector cut-off current VCE=40V; IB=0 1.0 mA
V
=100V; V
Collector cut-off current
Collector cut-off current VCB=100V; IE=0 0.5 mA
Emitter cut-off current VEB=5V; IC=0 1.0 mA
DC current gain IC=5A ; VCE=1.5V 25 75
DC current gain IC=15A ; VCE=4V 4
CE
TC=150℃
BE(off)
=1.5V
0.5
5.0
mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5972
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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