Datasheet 2n5951 Datasheet

Page 1
2N5951 N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process 50.
2N5951 — N-Channel RF Amplifier
September 2007
TO-92
1
1. Gate 2. Source 3. Drain
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ, T
STG
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a m aximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Drain-Gate Voltage 30 V Gate-Source Voltage -30 V Forward Gate Current 10 mA Operating and Storage Junction Temperature Range -55 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
Total Device Dissipation Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W Thermal Resistance, Junction to Ambient 357 °C/W
350
2.8
mW
mW/°C
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5951 Rev. 1.0.0 1
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2N5951 — N-Channel RF Amplifier
Electrical Characteristics* T
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
V
GS
On Characteristics
*I
DSS
RDS(on) Drain-Source On Resistance ID = 400μA, f = 1.0kHz 250 Ω
Small Signal Characteristics
goss Common- Source Output Conductance VDS = 15V, VGS = 0V, f = 1.0kHz 75 μ/Ω gos Output Conductance VDS = 15V, VGS = 0V, f = 100MHz 100 μ/Ω
gis Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz 6 pF
Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz 2 pF en Equivalent Short-Circuit Input Noise Voltage VDS = 15V, VGS = 0V, f = 1.0kHz 100 nV
NF Noise Figure
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle = 2%
Gate-Source Breakdown Voltage IG = 1.0μA, VDS = 0 -30 V Gate Reverse Current V
Gate-Source Cut-off Voltage V Gate-Source Forward Voltage V
= 15V, V
GS
T = 100°C
= 15V, ID = 100nA -2 -5 V
DS
= 15V, ID = 700μA -1.3 -4.5 V
DS
= 0, T = 25°C
DS
-1.0
-200
Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 7 13 mA
Input Conductance
VDS = 15V, VGS = 0V, f = 100MHz 250 μ/Ω
VDS = 15V, VGS = 0V, RG = 1.0mΩ, f = 1.0kHz RG = 1.0kΩ, f = 100MHz
2 5
nA
dB
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5951 Rev. 1.0.0 2
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2N5951 N-Channel RF Amplifier2N5951
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As used herein:
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provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference infor­mation only.
Rev. I30
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5951 Rev. 1.0.0 3
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