Datasheet 2n5911_2n5912 Datasheet

2N5911/5912

Vishay Siliconix

Matched N-Channel JFET Pairs

PRODUCT SUMMARY

Part Number V

2N5911 –1 to –5 –25 5 –1 10 2N5912 –1 to –5 –25 5 –1 15

FEATURES BENEFITS APPLICATIONS

D Two-Chip Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 1 pA D Low Noise D High CMRR: 85 dB

GS(off)

(V) V

(BR)GSS

Min (V) gfs Min (mS) IG Typ (pA) jV

D Minimum Parasitics Ensuring Maximum

High-Frequency Performance

D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal

GS1

– V

j Max (mV)

GS2

D Wideband Differential Amps D High-Speed, Temp-Compensated,

Single-Ended Input Amps

D High Speed Comparators D Impedance Converters

DESCRIPTION

The 2N5911/5912 are matched pairs of JFETs mounted in a TO-78 package. This two-chip design reduces parasitics and gives better performance at high frequencies while ensuring extremely tight matching.

The hermetically-sealed TO-78 package is available with full military screening per MIL-S-19500 (see Military Information).

S

1

D

1

2

3

G

1

ABSOLUTE MAXIMUM RATINGS

TO-78

4

Case

Top View

For similar products see the SO-8 packaged SST440/SST441, the TO-71 packaged U440/U441, the low-noise SST/U401 series, and the low-leakage U421/423 data sheets.

G

2

7

D

2

6

5

S

2

Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate-Gate Voltage "80 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (

Storage Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .

For applications information see AN102.

Document Number: 70255 S-04031—Rev. D, 04-Jun-01

1

/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

Power Dissipation : Per Side

Notes a. Derate 3 mW/_C above 25_C b. Derate 4 mW/_C above 25_C

Total

b

a

367 mW. . . . . . . . . . . . . . . . . . . . . . . .

500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .

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8-1

2N5911/5912

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Static

Gate-Source Breakdown Voltage

Gate-Source Cutoff Voltage V Saturation Drain Current

b

Gate Reverse Current I

Gate Operating Current I

Gate-Source Voltage V Gate-Source

Forward Voltage

c

Dynamic

Common-Source Forward Transconductance

Common-Source Output Conductance

Common-Source Forward Transconductance

Common-Source Output Conductance

Common-Source Input Capacitance

Common-Source Reverse Transfer Capacitance

Equivalent Input Noise Voltage

Noise Figure NF

Matching

Differential Gate-Source Voltage

Gate-Source Voltage Differential Change with Temperature

Saturation Drain Current Ratio

Transconductance Ratio

V

(BR)GSS

GS(off)

I

DSS

IG = –1 mA, VDS = 0 V VDS = 10 V, ID = 1 nA –3.5 –1 –5 –1 –5

VDS = 10 V, VGS = 0 V 15 7 40 7 40 mA

VGS = –15 V, VDS = 0 V –1 –100 –100 pA

GSS

TA = 150_C

VDG = 10 V, ID = 5 mA –1 –100 –100 pA

V

C

G

GS

GS(F)

g

fs

g

os

g

fs

g

os

C

iss

rss

e

n

VDG = 10 V, IG = 5 mA –1.5 –0.3 –4 –0.3 –4

IG = 1 mA, VDS = 0 V 0.7

VDG = 10 V, ID = 5 mA

f = 100 MHz

VDG = 10 V, ID = 5 mA

TA = 125_C

f = 1 kHz

f = 1 MHz

f = 10 kHz

RG = 100 kW

|

V

GS1

|

D

V

GS1

– V

DT I

DSS1

I

DSS2

g g

– V

fs1 fs2

GS2

|

VDG = 10 V, ID = 5 mA 4 10 15 mV

VDG = 10 V, ID = 5 mA

T

= –55 to 125_C

A

VDS = 10 V, VGS = 0 V 0.98 0.95 1 0.95 1

VDS = 10 V, ID = 5 mA

f = 1 kHz

Limits

2N5911 2N5912

–35 –25 –25

–2 –250 –250 nA

–0.3 –100 –100 nA

6 5 10 5 10 mS

70 100 100

5.8 5 10 5 10 mS

90 150 150

3 5 5

1 1.2 1.2

4 20 20

0.1 1 1 dB

15 20 40

0.98 0.95 1 0.95 1

mS

pF

nV⁄

√Hz

mV/_C

V

|

Differential Gate Current

Common Mode Rejection Ratio

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZF b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.

c

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8-2

I

G1–IG2

VDG = 10 V, ID = 5 mA, TA = 125_C

0.005 20 20 nA

CMRR VDG = 5 to 10 V, ID = 5 mA 85 dB

Document Number: 70255

S-04031—Rev. D, 04-Jun-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance

50

40

30

20

– Saturation Drain Current (mA)

10

DSS

I

vs. Gate-Source Cutoff Voltage

I

@ VDS = 10 V, VGS = 0 V

DSS

@ VDS = 10 V, VGS = 0 V

g

fs

f = 1 kHz

g

fs

I

DSS

20

g

fs

– Forward Transconductance (mS)

16

12

8

4

100 nA

10 nA

1 nA

100 pA

– Gate Leakage

G

10 pA

I

1 pA

I

Gate Leakage Current

@ I

G(on)

D

TA = 125_C

I

@ 125_C

GSS

TA = 25_C

2N5911/5912

Vishay Siliconix

ID = 10 mA

1 mA

I

GSS

1 mA

@ 25_C

10 mA

0

0 –10–8–2

–4 –6

V

– Gate-Source Cutoff Voltage (V)

GS(off)

0

0.1 pA

Output Characteristics

10

V

= –2 V

GS(off)

8

6

4

– Drain Current (mA)

D

I

2

0

068210

4

VDS – Drain-Source Voltage (V)

VGS= 0 V

–0.2 V

–0.4 V –0.6 V –0.8 V

–1.0 V –1.2 V

– Drain Current (mA)

D

I

Output Characteristics

5

V

GS(off)

4

3

2

– Drain Current (mA)

D

I

1

= –2 V

VGS= 0 V

–0.2 V

–0.4 V

–0.6 V

–0.8 V

–1.0 V –1.2 V

– Drain Current (mA)

D

I

0 4 16 20812

VDG – Drain-Gate Voltage (V)

30

V

GS(off)

24

18

12

6

0

08210

15

V

12

9

6

3

Output Characteristics

= –5 V

46

VDS – Drain-Source Voltage (V)

Output Characteristics

= –5 V

GS(off)

–1.0 V

–1.5 V

–2.0 V

VGS= 0 V

–0.5 V

–1.0 V

–1.5 V

–2.0 V

–2.5 V –3.0 V

–3.5 V

VGS= 0 V

–0.5 V

–2.5 V –3.0 V

–3.5 V

0

0 0.2 0.8 1

Document Number: 70255 S-04031—Rev. D, 04-Jun-01

0.4 0.6

VDS – Drain-Source Voltage (V)

0

0 0.2 0.8 1

0.4 0.6

VDS – Drain-Source Voltage (V)

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2N5911/5912

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

10

V

GS(off)

Transfer Characteristics

30

= –2 V VDS = 10 V V

Transfer Characteristics

GS(off)

= –5 V VDS = 10 V

8

TA = –55_C

6

4

– Drain Current (mA)

D

I

125_C

2

0

0 –0.4 –1.6 –2

Transconductance vs. Gate-Source Voltage

10

V

GS(off)

8

6

4

TA = –55_C

125_C

25_C

–0.8 –1.2

VGS – Gate-Source Voltage (V)

= –2 V V

25_C

f = 1 kHz

24

18

12

– Drain Current (mA)

D

I

6

0

0 –4 –5–1

Transconductance vs. Gate-Source Voltage

10

8

25_C

6

4

TA = –55_C

25_C

125_C

–2 –3

VGS – Gate-Source Voltage (V)

GS(off)

125_C

= –5 VVDS = 10 V

TA = –55_C

2

– Forward Transconductance (mS)

fs

g

0

0 –1.2 –1.6–0.4 –2

Circuit Voltage Gain vs. Drain Current

50

40

30

– Voltage Gain

20

V

A

+

V

1 ) RLg

Assume VDD = 15 V, VDS = 5 V

10

0

10 V

R

+

L

–0.8

VGS – Gate-Source Voltage (V)

V

= –2 V

GS(off)

V

GS(off)

g

fsRL

os

I

D

1100.1

I

– Drain Current (mA)

D

= –5 V

2

– Forward Transconductance (mS)

fs

g

0

200

160

120

80

– Drain-Source On-Resistance ( Ω )

40

DS(on)

r

0

VDS = 10 V f = 1 kHz

–2 –3

VGS – Gate-Source Voltage (V)

On-Resistance vs. Drain Current

V

= –2 V

GS(off)

–5 V

1 10 100

ID – Drain Current (mA)

–5–4–10

TA = 25_C

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Document Number: 70255

S-04031—Rev. D, 04-Jun-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Source Input Capacitance

10

f = 1 MHz

vs. Gate-Source Voltage

Common-Source Reverse Feedback

Capacitance vs. Gate-Source Voltage

5

f = 1 MHz

2N5911/5912

Vishay Siliconix

– Input Capacitance (pF)C iss

(mS)

8

6

4

2

0

100

10

1

0 –16 –20–4

TA = 25_C

= 10 V

V

DS

= 10 mA

I

D

g

ig

b

is

b

ig

4

3

VDS = 5 V

0 V

10 V

2

1

– Reverse Feedback Capacitance (pF)C rss

0

–8 –12 –8

V

– Gate-Source Voltage (V)

GS

0 –12 –20–16–4

Input Admittance

100

10

(mS)

1

TA = 25_C

= 10 V

V

DS

= 10 mA

I

D

–b

fs

b

fg

VDS = 5 V

0 V

V

– Gate-Source Voltage (V)

GS

Forward Admittance

10 V

g

–g

fg

fs

g

is

0.1 100 1000

10

TA = 25_C

= 10 V

V

DS

= 10 mA

I

D

–b

rs

1

(mS)

–b

0.1

0.01 100 1000

Document Number: 70255 S-04031—Rev. D, 04-Jun-01

0.1

200 500 200 500

f – Frequency (MHz)

Reverse Admittance

100 1000

f – Frequency (MHz)

100

TA = 25_C

= 10 V

V

DS

= 10 mA

I

D

Output Admittance

10

b

og,

rg

–g

rs

–g

rg

g

rg

(mS)

1

g

os

g

og,

os

0.1

200 500 200 500

f – Frequency (MHz)

100 1000

f – Frequency (MHz)

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8-5

2N5911/5912

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

en – Noise Voltage nV/ Hz

Equivalent Input Noise Voltage vs. Frequency

50

VDS = 10 V

40

30

20

10

ID = 1 mA

10 mA

0

10 100 1 k 100 k10 k

f – Frequency (Hz)

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

200

g

os

160

120

200

160

120

150

120

– Output Conductance (µS)

os

g

Output Conductance vs. Drain Current

V

= –5 V

GS(off)

90

25_C

60

30

0

0.1 1 10 ID – Drain Current (mA)

125_C

VDS = 10 V f = 1 kHz

TA = –55_C

Common-Source Forward Transconductance

10

V

g

os

– Output Conductance (µS)

GS(off)

8

6

vs. Drain Current

= –5 V

VDS = 10 V f = 1 kHz

TA = –55_C

80 80

– Drain-Source On-Resistance ( Ω )

40

DS(on)

r

0

0 –10–8–2

rDS @ ID = 1 mA, VGS = 0 V

@ VDS = 10 V, VGS = 0 V

g

os

f = 1 kHz

–4 –6

V

– Gate-Source Cutoff Voltage (V)

GS(off)

r

DS

4

40

0

– Forward Transconductance (mS)

2

fs

g

0

0.1

25_C

125_C

110

ID – Drain Current (mA)

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8-6

Document Number: 70255

S-04031—Rev. D, 04-Jun-01

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

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Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1