Datasheet 2N5883, 2N5884, 2N5885, 2N5886 Datasheet (ON Semiconductor)

2N5883, 2N5884 (PNP)

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2N5885, 2N5886 (NPN)

2N5884 and 2N5886 are Preferred Devices

Complementary Silicon
High−Power Transistors

Complementary silicon high−power transistors are designed for

general−purpose power amplifier and switching applications.

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Features

• Low Collector−Emitter Saturation Voltage −

V

= 1.0 Vdc, (max) at IC = 15 Adc

CE(sat)

• Low Leakage Current

I

= 1.0 mAdc (max) at Rated Voltage

CEX

• Excellent DC Current Gain −

hFE = 20 (min) at IC = 10 Adc

• High Current Gain Bandwidth Product −

f

= 4.0 MHz (min) at I

t

= 1.0 Adc

C

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Collector−Emitter Voltage

2N5883, 2N5885

ОООООООООО

2N5884, 2N5886

Collector−Base Voltage

ОООООООООО

2N5883, 2N5885

2N5884, 2N5886
Emitter−Base Voltage
Collector Current −

Continuous

ОООООООООО

Peak
Base Current
Total Device Dissipation @ TC = 25°C

Derate above 25°C

ОООООООООО

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data. Units and conditions differ on some
parameters and re−registration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.

Symbol

V

CEO

Î

V

CB

Î

V

EB

I

C

Î

I

B

P

D

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TJ, T

stg

Symbol

q

JC

Value

60
80

ÎÎÎ

60

ÎÎÎ

80

5.0

25

ÎÎÎ

50

7.5

200

1.15

ÎÎÎ

–65 to +200

Max

0.875

Unit

Vdc

Vdc

Vdc
Adc

Adc

W

W/°C

°C

Unit

°C/W

25 AMPERE COMPLEMENTARY

SILICON POWER TRANSISTOR

60 − 80 VOLTS, 200 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

2N588xG

AYYWW

MEX

2N588x = Device Code

x = 3, 4, 5, or 6
G = Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

1 Publication Order Number:

March, 2006 − Rev. 11

2N5883/D

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

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ELECTRICAL CHARACTERISTICS (Note 2) (T

= 25°C unless otherwise noted)

C

Characteristic

Collector−Emitter Sustaining Voltage (Note 3) 2N5883, 2N5885

(IC = 200 mAdc, IB = 0) 2N5884, 2N5886

ООООООООООООООООООООО

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) 2N5883, 2N5885
(VCE = 40 Vdc, IB = 0) 2N5984, 2N5886

ООООООООООООООООООООО

Collector Cutoff Current

(VCE = 60 Vdc, V

ООООООООООООООООООООО

(VCE = 80 Vdc, V
(VCE = 60 Vdc, V

ООООООООООООООООООООО

(VCE = 80 Vdc, V

Collector Cutoff Current

ООООООООООООООООООООО

(VCB = 60 Vdc, IE = 0) 2N5883, 2N5885
(VCB = 80 Vdc, IE = 0) 2N5884, 2N5886

ООООООООООООООООООООО

= 1.5 Vdc) 2N5883, 2N5885

BE(off)

= 1.5 Vdc) 2N5884, 2N5886

BE(off)

= 1.5 Vdc, TC = 150°C) 2N5883, 2N5885

BE(off)

= 1.5 Vdc, TC = 150°C) 2N5884, 2N5886

BE(off)

Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

ООООООООООООООООООООО

(IC = 10 Adc, VCE = 4.0 Vdc)
(IC = 25 Adc, VCE = 4.0 Vdc)

Collector−Emitter Saturation Voltage (Note 3)

ООООООООООООООООООООО

(IC = 15 Adc, IB = 1.5 Adc)
(IC = 25 Adc, IB = 6.25 Adc)

ООООООООООООООООООООО

Base−Emitter Saturation Voltage (Note 3) (IC = 25 Adc, IB = 6.25 Adc)
Base−Emitter On Voltage (Note 3) (IC = 10 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 10 Vdc, f

= 1.0 MHz)

test

Output Capacitance 2N5883, 2N5884

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5885, 2N5886

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f

= 1.0 kHz)

test

SWITCHING CHARACTERISTICS

Rise Time

ООООООООООО

Storage Time
Fall Time

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

ООООООООООО

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT = |hfe| • f

test

.

Symbol

V

CEO(sus)

ÎÎ

I

CEO

ÎÎ

I

CEX

ÎÎ

ÎÎ

I

CBO

ÎÎ

ÎÎ

I

EBO

h

FE

ÎÎ

V

CE(sat)

ÎÎ

ÎÎ

V

BE(sat)

V

BE(on)

f

T

C

ob

h

fe

t

r

t

s

t

f

Min

60
80

ÎÎ

−

−

ÎÎ

−

ÎÎ

−

−

ÎÎ

−

ÎÎ

−

−

ÎÎ

−

35

ÎÎ

20

4.0

ÎÎ

−

−

ÎÎ

−

−

4.0

−

−

20

−

−

−

Max

−

−

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2.0

2.0

Î

1.0

Î

1.0
10

Î

10

Î

1.0

1.0

Î

1.0

−

Î

100

Î

1.0

4.0

Î

2.5

1.5

−

1000

500

−

0.7

1.0

0.8

Unit

Vdc

Î

mAdc

Î

mAdc

Î

Î

Î

mAdc

Î

mAdc

−

Î

Î

Vdc

Î

Vdc
Vdc

MHz

pF

−

ms
ms

ms

200

175

150

125

100

75

50

, POWER DISSIPATION (WATTS)

D

P

25

0

0 25 50 75 100 125 150 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

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2

175

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

0

VCC−30 V

TURN−ON TIME

+2.0 V

0

≤

t

r

20ns

DUTY CYCLE ≈ 2.0%

−11V

10 to 100 ms

10

R

B

TURN−OFF TIME

+9.0V

0

−11V

DUTY CYCLE ≈ 2.0%

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.

tr ≤ 20ns

10 to 100 ms

10

R

B

VBB+7.0 V

Figure 2. Switching Time Equivalent Test Circuits

R

L

VCC−30 V

R

L

3.0

TO SCOPE

tr ≤ 20 ns

3.0

TO SCOPE

tr ≤ 20 ns

t, TIME (s)μ

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

TJ = 25°C
IC/IB = 10
VCC = 30 V
V

= 2 V

BE(off)

t

r

2N5883, 2N5884 (PNP)

t

d

0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 30
IC, COLLECTOR CURRENT (AMPERES)

2N5885, 2N5886 (NPN)

10

Figure 3. Turn−On Time

20

1.0

D = 0.5

0.5

0.2

0.1

0.05

RESISTANCE (NORMALIZED)

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

100

50

20

10

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMPERES)

C

0.2

I

0.1

1.0

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.02

CURVES APPLY BELOW RATED V

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500

1ms

5ms

dc

TJ = 200°C
SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)

CEO

2N5883, 2N5885
2N5884, 2N5886

2.0 3.0 7.0 10 20 30 50 10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0

Figure 5. Active−Region Safe Operating Area

qJC(t) = r(t) q
qJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

− TC = P

J(pk)

t, TIME (ms)

Figure 4. Thermal Response

500 ms

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 200°C. T
Figure 4. At high case temperatures, thermal limitations will

70

reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

P

JC

1

(t)

(pk) qJC

may be calculated from the data in

J(pk)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

J(pk)

= 200°C; TC is

2

1000

C

− V

CE

J(pk)

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3

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

10

7.0

5.0

3.0

2.0

1.0

0.7

t, TIME (s)μ

0.5

0.3

0.2

0.1

0.3

0.5 0.7 1.0 2.0 5.0 10 30

PNP DEVICES
2N5883 and 2N5884

1000

700
500 TJ = 150°C

300

25°C

200

−55 °C

100

70
50

, DC CURRENT GAIN

FE

h

30

20

2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)

t

s

t

s

t

f

t

f

3.0

IC, COLLECTOR CURRENT (AMPERES)

7.0

Figure 6. Turn−Off Time

TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = I

B2

20

VCE = 4.0 V

3000

2000

1000

700

C, CAPACITANCE (pF)

500

300

0.1

NPN DEVICES
2N5885 and 2N5886

1000

700
500

300

200

100

, DC CURRENT GAIN

FE

h

TJ = 150°C

25°C
70
50

30

20

−55 °C

C

C

ib

2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)

VR, REVERSE VOLTAGE (VOLTS)

ob

C

ib

2.0 5.0 10 20 100500.2 0.5 1.0

Figure 7. Capacitance

TJ = 25°C

C

ob

VCE = 4.0 V

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

10

0.3

0.5 0.7 1.0 3.0 5.0 7.0 10 30

IC, COLLECTOR CURRENT (AMPERES)

2.0 20

Figure 8. DC Current Gain

2.0

1.6

IC = 2.0 A

1.2

0.8

0.4

0

0.01

0.02 0.1 0.2 1.0 10

5.0 A

0.05 0.5

IB, BASE CURRENT (AMPERES)

10 A

20 A

TJ = 25°C

2.0 5.0

10

0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 302.0 20

IC, COLLECTOR CURRENT (AMPERES)

Figure 9. DC Current Gain

2.0

1.6

IC = 2.0 A 5.0 A 10 A 20 A

0.0100.02 0.1 0.2 1.0 10

0.05 0.5 2.0 5.0

IB, COLLECTOR CURRENT (AMPERES)

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

1.2

0.8

0.4

Figure 10. Collector Saturation Region Figure 11. Collector Saturation Region

TJ = 25°C

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4

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

V

VOLTAGE

(VOLTS)

2.0

TJ = 25°C

1.6

1.2

V

@ IC/IB = 10

0.8

,

0.4

0

0.3

BE(sat)

VBE @ VCE = 4 V

V

@ IC/IB = 10

CE(sat)

0.5 0.7 1.0 2.0 3.0 7.0 10 30

IC, COLLECTOR CURRENT (AMPERES)

5.0

20

Figure 12. “On” Voltages Figure 13. “On” Voltages

ORDERING INFORMATION

Device Package Shipping

2N5883 TO−204
2N5883G TO−204

(Pb−Free)

2.0

TJ = 25°C

1.6

1.2

V

@ IC/IB = 10

0.8

V, VOLTAGE (VOLTS)

0.4

BE(sat)

VBE @ VCE = 4 V

V

@ IC/IB = 10

CE(sat)

0

0.3 0.5 0.7 1.0 2.0 3.0 7.0 10 30

IC, COLLECTOR CURRENT (AMPERES)

205.0

2N5884 TO−204
2N5884G TO−204

2N5885 TO−204
2N5885G TO−204

2N5886 TO−204
2N5886G

(Pb−Free)

(Pb−Free)

TO−204

(Pb−Free)

100 Units / Tray

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5

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

TO−204 (TO−3)

PACKAGE DIMENSIONS

CASE 1−07

ISSUE Z

A

N

C

E

2 PLD

0.13 (0.005) Y

U

V

H

L

2

1

G

−T−

K

M

−Y−

SEATING
PLANE

M

Q

T

M

B

−Q−

0.13 (0.005) T

M

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF
B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19

L 0.665 BSC 16.89 BSC
N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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2N5883/D