Datasheet 2N5883, 2N5884, 2N5885, 2N5886 Datasheet (ON Semiconductor)

2N5883, 2N5884 (PNP)

Î

S

2N5885, 2N5886 (NPN)

2N5884 and 2N5886 are Preferred Devices

Complementary Silicon High−Power Transistors

Complementary silicon high−power transistors are designed for

general−purpose power amplifier and switching applications.

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Features

• Low Collector−Emitter Saturation Voltage −

V

= 1.0 Vdc, (max) at IC = 15 Adc

CE(sat)

• Low Leakage Current

I

= 1.0 mAdc (max) at Rated Voltage

CEX

• Excellent DC Current Gain −

hFE = 20 (min) at IC = 10 Adc

• High Current Gain Bandwidth Product −

f

= 4.0 MHz (min) at I

t

= 1.0 Adc

C

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Collector−Emitter Voltage

2N5883, 2N5885

ОООООООООО

2N5884, 2N5886

Collector−Base Voltage

ОООООООООО

2N5883, 2N5885

2N5884, 2N5886 Emitter−Base Voltage Collector Current −

Continuous

ОООООООООО

Peak Base Current Total Device Dissipation @ TC = 25°C

Derate above 25°C

ОООООООООО

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data. Units and conditions differ on some parameters and re−registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data.

Symbol

V

CEO

Î

V

CB

Î

V

EB

I

C

Î

I

B

P

D

Î

TJ, T

stg

Symbol

q

JC

Value

60 80

ÎÎÎ

60

ÎÎÎ

80

5.0

25

ÎÎÎ

50

7.5

200

1.15

ÎÎÎ

–65 to +200

Max

0.875

Unit

Vdc

Vdc Adc

Adc

W

W/°C

°C

Unit

°C/W

25 AMPERE COMPLEMENTARY

SILICON POWER TRANSISTOR

60 − 80 VOLTS, 200 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

2N588xG

AYYWW

MEX

2N588x = Device Code

x = 3, 4, 5, or 6 G = Pb−Free Package A = Assembly Location YY = Year WW = Work Week MEX = Country of Origin

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

1 Publication Order Number:

March, 2006 − Rev. 11

2N5883/D

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

Î

ELECTRICAL CHARACTERISTICS (Note 2) (T

= 25°C unless otherwise noted)

C

Characteristic

Collector−Emitter Sustaining Voltage (Note 3) 2N5883, 2N5885

(IC = 200 mAdc, IB = 0) 2N5884, 2N5886

ООООООООООООООООООООО

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) 2N5883, 2N5885 (VCE = 40 Vdc, IB = 0) 2N5984, 2N5886

ООООООООООООООООООООО

Collector Cutoff Current

(VCE = 60 Vdc, V

ООООООООООООООООООООО

(VCE = 80 Vdc, V (VCE = 60 Vdc, V

ООООООООООООООООООООО

(VCE = 80 Vdc, V

Collector Cutoff Current

ООООООООООООООООООООО

(VCB = 60 Vdc, IE = 0) 2N5883, 2N5885 (VCB = 80 Vdc, IE = 0) 2N5884, 2N5886

ООООООООООООООООООООО

= 1.5 Vdc) 2N5883, 2N5885

BE(off)

= 1.5 Vdc) 2N5884, 2N5886

BE(off)

= 1.5 Vdc, TC = 150°C) 2N5883, 2N5885

BE(off)

= 1.5 Vdc, TC = 150°C) 2N5884, 2N5886

BE(off)

Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

ООООООООООООООООООООО

(IC = 10 Adc, VCE = 4.0 Vdc) (IC = 25 Adc, VCE = 4.0 Vdc)

Collector−Emitter Saturation Voltage (Note 3)

ООООООООООООООООООООО

(IC = 15 Adc, IB = 1.5 Adc) (IC = 25 Adc, IB = 6.25 Adc)

ООООООООООООООООООООО

Base−Emitter Saturation Voltage (Note 3) (IC = 25 Adc, IB = 6.25 Adc) Base−Emitter On Voltage (Note 3) (IC = 10 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 10 Vdc, f

= 1.0 MHz)

test

Output Capacitance 2N5883, 2N5884

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5885, 2N5886

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f

= 1.0 kHz)

test

SWITCHING CHARACTERISTICS

Rise Time

ООООООООООО

Storage Time Fall Time

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

ООООООООООО

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT = |hfe| • f

test

.

Symbol

V

CEO(sus)

ÎÎ

I

CEO

ÎÎ

I

CEX

ÎÎ

I

CBO

ÎÎ

I

EBO

h

FE

ÎÎ

V

CE(sat)

ÎÎ

V

BE(sat)

V

BE(on)

f

T

C

ob

h

fe

t

r

t

s

t

f

Min

60 80

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

35

ÎÎ

20

4.0

ÎÎ

−

ÎÎ

−

4.0

−

20

−

Max

−

Î

2.0

Î

1.0

Î

1.0 10

Î

10

Î

1.0

Î

1.0

−

Î

100

Î

1.0

4.0

Î

2.5

1.5

−

1000

500

−

0.7

1.0

0.8

Unit

Vdc

Î

mAdc

Î

mAdc

Î

mAdc

Î

mAdc

−

Î

Vdc

Î

Vdc Vdc

MHz

pF

−

ms ms

ms

200

175

150

125

100

75

50

, POWER DISSIPATION (WATTS)

D

P

25

0

0 25 50 75 100 125 150 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

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2

175

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

0

VCC−30 V

TURN−ON TIME

+2.0 V

0

≤

t

r

20ns

DUTY CYCLE ≈ 2.0%

−11V

10 to 100 ms

10

R

B

TURN−OFF TIME

+9.0V

0

−11V

DUTY CYCLE ≈ 2.0%

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES.

tr ≤ 20ns

10 to 100 ms

10

R

B

VBB+7.0 V

Figure 2. Switching Time Equivalent Test Circuits

R

L

VCC−30 V

R

L

3.0

TO SCOPE

tr ≤ 20 ns

3.0

TO SCOPE

tr ≤ 20 ns

t, TIME (s)μ

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

TJ = 25°C IC/IB = 10 VCC = 30 V V

= 2 V

BE(off)

t

r

2N5883, 2N5884 (PNP)

t

d

0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 30 IC, COLLECTOR CURRENT (AMPERES)

2N5885, 2N5886 (NPN)

10

Figure 3. Turn−On Time

20

1.0

D = 0.5

0.5

0.2

0.1

0.05

RESISTANCE (NORMALIZED)

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

100

50

20

10

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMPERES)

C

0.2

I

0.1

1.0

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.02

CURVES APPLY BELOW RATED V

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500

1ms

5ms

dc

TJ = 200°C SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE)

CEO

2N5883, 2N5885 2N5884, 2N5886

2.0 3.0 7.0 10 20 30 50 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0

Figure 5. Active−Region Safe Operating Area

qJC(t) = r(t) q qJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

− TC = P

J(pk)

t, TIME (ms)

Figure 4. Thermal Response

500 ms

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T v 200°C. T Figure 4. At high case temperatures, thermal limitations will

70

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

P

JC

1

(t)

(pk) qJC

may be calculated from the data in

J(pk)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

J(pk)

= 200°C; TC is

2

1000

C

− V

CE

J(pk)

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3

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

10

7.0

5.0

3.0

2.0

1.0

0.7

t, TIME (s)μ

0.5

0.3

0.2

0.1

0.3

0.5 0.7 1.0 2.0 5.0 10 30

PNP DEVICES 2N5883 and 2N5884

1000

700 500 TJ = 150°C

300

25°C

200

−55 °C

100

70 50

, DC CURRENT GAIN

FE

h

30

20

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

t

s

t

s

t

f

t

f

3.0

IC, COLLECTOR CURRENT (AMPERES)

7.0

Figure 6. Turn−Off Time

TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = I

B2

20

VCE = 4.0 V

3000

2000

1000

700

C, CAPACITANCE (pF)

500

300

0.1

NPN DEVICES 2N5885 and 2N5886

1000

700 500

300

200

100

, DC CURRENT GAIN

FE

h

TJ = 150°C

25°C 70 50

30

20

−55 °C

C

ib

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

VR, REVERSE VOLTAGE (VOLTS)

ob

C

ib

2.0 5.0 10 20 100500.2 0.5 1.0

Figure 7. Capacitance

TJ = 25°C

C

ob

VCE = 4.0 V

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

10

0.3

0.5 0.7 1.0 3.0 5.0 7.0 10 30

IC, COLLECTOR CURRENT (AMPERES)

2.0 20

Figure 8. DC Current Gain

2.0

1.6

IC = 2.0 A

1.2

0.8

0.4

0

0.01

0.02 0.1 0.2 1.0 10

5.0 A

0.05 0.5

IB, BASE CURRENT (AMPERES)

10 A

20 A

TJ = 25°C

2.0 5.0

10

0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 302.0 20

IC, COLLECTOR CURRENT (AMPERES)

Figure 9. DC Current Gain

2.0

1.6

IC = 2.0 A 5.0 A 10 A 20 A

0.0100.02 0.1 0.2 1.0 10

0.05 0.5 2.0 5.0

IB, COLLECTOR CURRENT (AMPERES)

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

1.2

0.8

0.4

Figure 10. Collector Saturation Region Figure 11. Collector Saturation Region

TJ = 25°C

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2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

V

VOLTAGE

(VOLTS)

2.0

TJ = 25°C

1.6

1.2

V

@ IC/IB = 10

0.8

,

0.4

0

0.3

BE(sat)

VBE @ VCE = 4 V

V

@ IC/IB = 10

CE(sat)

0.5 0.7 1.0 2.0 3.0 7.0 10 30

IC, COLLECTOR CURRENT (AMPERES)

5.0

20

Figure 12. “On” Voltages Figure 13. “On” Voltages

ORDERING INFORMATION

Device Package Shipping

2N5883 TO−204 2N5883G TO−204

(Pb−Free)

2.0

TJ = 25°C

1.6

1.2

V

@ IC/IB = 10

0.8

V, VOLTAGE (VOLTS)

0.4

BE(sat)

VBE @ VCE = 4 V

V

@ IC/IB = 10

CE(sat)

0

0.3 0.5 0.7 1.0 2.0 3.0 7.0 10 30

IC, COLLECTOR CURRENT (AMPERES)

205.0

2N5884 TO−204 2N5884G TO−204

2N5885 TO−204 2N5885G TO−204

2N5886 TO−204 2N5886G

(Pb−Free)

TO−204

(Pb−Free)

100 Units / Tray

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5

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

TO−204 (TO−3)

PACKAGE DIMENSIONS

CASE 1−07

ISSUE Z

A

N

C

E

2 PLD

0.13 (0.005) Y

U

V

H

L

2

1

G

−T−

K

M

−Y−

SEATING PLANE

M

Q

T

M

B

−Q−

0.13 (0.005) T

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF B −−− 1.050 −−− 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19

L 0.665 BSC 16.89 BSC N −−− 0.830 −−− 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N5883/D