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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2N5885/5886
DESCRIPTION
·DC Current Gain : hFE= 20(Min)@IC= 10A
·Low Saturation Voltage: V
·Complement to Type 2N5883/5884
APPLICATIONS
·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
)= 1.0V(Max)@ IC= 15A
CE(sat
PARAMETER VALUE UNIT
2N5885
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 25 A
ICM Collector Current-Peak 50 A
IB Base Current-Continuous 7.5 A
PC Collector Power Dissipation @TC=25℃
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage
2N5886
2N5885
Collector-Emitter Voltage
2N5886
Emitter-Base Voltage 5 V
Storage Temperature -65~200 ℃
60
80
60
80
200 W
THERMAL CHARACTERISTICS
V
V
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 0.875 ℃/W
PARAMETER MAX UNIT
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2N5885/5886
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)
V
CE
(sat)
V
BE
(sat)
V
BE(on)
I
CEO
I
CEX
I
CBO
PARAMETER CONDITIONS MIN MAX UNIT
Collector-Emitter
Sustaining Voltage
Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 1.0 V
-1
Collector-Emitter Saturation Voltage IC= 25A; IB= 6.25A 4.0 V
-2
Base-Emitter Saturation Voltage IC= 25A; IB= 6.25A 2.5 V
Base-Emitter On Voltage IC= 10A ; VCE= 4V 1.5 V
Collector
Cutoff Current
Collector
Cutoff Current
Collector
Cutoff Current
2N5885 60
IC= 200mA ; IB= 0
2N5886
80
2N5885 VCE= 30V; IB= 0 2.0
2N5886 VCE= 40V; IB= 0
2N5885
2N5886
VCE= 60V; V
VCE= 60V; V
VCE= 80V; V
VCE= 80V; V
= 1.5V
BE(
)
off
= 1.5V,TC=150℃
BE(
)
off
= 1.5V
BE(
)
off
= 1.5V,TC=150℃
BE(
)
off
2N5885 VCB= 60V; IE= 0 1.0
2N5886 VCB= 80V; IE= 0
V
2.0
1.0
10
1.0
10
1.0
mA
mA
mA
I
Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA
EBO
h
DC Current Gain IC= 3A ; VCE= 4V 35
FE-1
h
DC Current Gain IC= 10A ; VCE= 4V 20 100
FE-2
h
DC Current Gain IC= 25A ; VCE= 4V 4
FE-3
COB Output Capacitance
fT Current-Gain—Bandwidth Product
IE= 0;VCB= 10V;f
test
IC= 1A ; VCE= 10V ;f
= 1MHz
= 1MHz
test
500 pF
4 MHz
Switching Times
tr
t
stg
tf
Rise Time 0.7 μs
Storage Time 1.0 μs
Fall Time
IC= 10A; IB1= -IB2= 1A;VCC= 30V
0.8 μs
isc Website：www.iscsemi.cn
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