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■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ COMPLEMEN TA RY PNP - NPN DEVI CES
■ HIGH CURRENT CAPABILITY
APPLICATIONS
■ GENER AL PURPOSE SWITCHING AND
AMPLIFIER
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5884 and 2N5886 are complementary
silicon power transistor in Jedec TO-3 metal case
inteded for use in power linear amplifiers and
switching applications.
2N5884
2N5886
COMPLE MENTARY SILICON
HIGH POWER TRANSISTORS
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
PNP 2N5884
NPN 2N5886
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 80 V
CBO
Collector-Emitter Voltage (IB = 0) 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 25 A
I
C
Collector Peak Current 50 A
CM
Base Current 7.5 A
I
B
Total Dissipation at Tc ≤ 25 oC 200 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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2N5884 / 2N5886
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.875
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= rated V
V
CE
VCE = rated V
= rated V
V
CE
= 40 V 2 mA
V
CE
= 5 V 1 mA
V
EB
CEO
Tc = 150 oC
CEO
CBO
1
10
1mA
IC = 200 mA 80 V
Sustaining Voltage
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
IC = 15 A IB = 1.5 A
I
= 25 A IB = 6.25 A
C
1
4
IC = 25 A IB = 6.25 A 2.5 V
Saturation Voltage
V
∗ Base-Emitter Voltage IC = 10 A VCE = 4 V 1.5 V
BE
h
∗ DC Current Gain IC = 3 A VCE = 4 V
FE
h
Small Signal Current
fe
I
= 10 A VCE = 4 V
C
I
= 25 A VCE = 4 V
C
IC = 3 A VCE = 4 V f = 1KHz 20
35
20
100
4
Gain
f
C
CBO
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Transition frequency IC = 1 A VCE = 10 V f =1 MHz 4 MHz
T
Collector Base
Capacitance
IE = 0 VCB = 10 V f = 1MHz
for NPN type
for PNP type
t
Rise Time IC = 10 A VCC = 30 V
r
Storage Time 1 µs
s
t
Fall Time 0.8 µs
f
I
= -IB2 = 1A
B1
500
1000pFpF
0.7 µs
mA
mA
V
V
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P003F
TO-3 MECHANICAL DATA
2N5884 / 2N5886
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
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Page 4
2N5884 / 2N5886
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices o r systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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