Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5883 2N5884
DESCRIPTION
·With TO-3 package
·Complement to type 2N5885 2N5886
·High power dissipations
APPLICATIONS
·They are intended for use in power linear
and switching applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N5883 -60
V
CBO
V
CEO
V
EBO
IC Collector current -25 A
ICM Collector current-peak -50 A
IB Base current -7.5 A
PD Total Power Dissipation
Collector-base voltage
2N5884
2N5883 -60
Collector-emitter voltage
2N5884
Emitter-base voltage Open collector -5 V
Open emitter
Open base
T
=25℃
C
V
-80
V
-80
200 W
Tj Junction temperature 200
T
Storage temperature -65~200
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 0.875 ℃/W
th j-c
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5883 2N5884
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
VBE Base-emitter on voltage IC=-10A ; VCE=-4V -1.5 V
I
CBO
I
CEO
I
CEV
I
EBO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=-15A; IB=-1.5A -1 V
Collector-emitter saturation voltage IC=-25A ;IB=-6.25A -4 V
Base-emitter saturation voltage IC=-25A ;IB=-6.25A -2.5 V
Collector cut-off current VCB=ratedV
Collector cut-off current
Collector cut-off current
(V
Emitter cut-off current VEB=-5V; IC=0 -1 mA
BE(off)
=1.5V)
2N5883 -60
IC=-0.2A ;IB=0
2N5884
CBO
2N5883 VCE=-30V; IB=0
2N5884 V
=-40V; IB=0
CE
VCE=ratedV
V
=ratedV
CE
CEO
CEO
; IB=0 -1 mA
; -1
; TC=150℃
-80
-2 mA
V
mA
-10
h
DC current gain IC=-3A ; VCE=-V 35
FE-1
h
DC current gain IC=-10A ; VCE=-4V 20 100
FE-2
h
DC current gain IC=-25A ; VCE=-4V 4
FE-3
fT Trainsistion frequency IC=-1A ; VCE=-10V;f=1MHz 4 MHz
Ccb Collector base capacitance IE=0; VCB=-10V;f=1MHz 500 pF
Switching times
tr Rise time 0.7
ts Storage time 1.0
tf Fall time
I
=-10A ;IB1=- IB2=-1A
C
V
=-30V
CC
μs
μs
0.8
μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5883 2N5884
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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