Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5875 2N5876
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5877 2N5878
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N5875 -60
V
CBO
V
CEO
V
EBO
IC Collector current -10 A
ICM Collector current-peak -20 A
IB Base current -4 A
Collector-base voltage
2N5876
2N5875 -60
Collector-emitter voltage
2N5876
Emitter-base voltage Open collector -5 V
Open emitter
Open base
V
-80
V
-80
T
PD Total Power Dissipation
Tj Junction temperature 200
T
Storage temperature -65~200
stg
=25℃
C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.17 ℃/W
th j-c
150 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5875 2N5876
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
VBE Base-emitter on voltage IC=-4A ; VCE=-4V -1.5 V
I
CBO
I
CEO
I
CEX
I
EBO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=-5A;IB=-0.5A -1.0 V
Collector-emitter saturation voltage IC=-10A;IB=-2.5A -3.0 V
Base-emitter saturation voltage IC=-10A;IB=-2.5A -2.5 V
Collector cut-off current VCB=ratedV
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB=-5V; IC=0 -1.0 mA
2N5875 -60
IC=-0.2A ;IB=0
2N5876
CBO
2N5875 VCE=-30V; IB=0
2N5876 V
=-40V; IB=0
CE
=ratedVCE; VBE=1.5V
V
CE
=150℃
T
C
-80
; IB=0 -0.5 mA
-1.0 mA
V
-0.5
-5.0
mA
h
DC current gain IC=-1A ; VCE=-4V 35
FE-1
h
DC current gain IC=-4A ; VCE=-4V 20 100
FE-2
h
DC current gain IC=-10A ; VCE=-4V 4
FE-3
fT Trainsistion frequency IC=-0.5A ; VCE=-10V;f=1MHz 4 MHz
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5875 2N5876
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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