Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5869 2N5870
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N5869 60
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
PD Total Power Dissipation TC=25℃ 87.5 W
Collector-base voltage
2N5870
2N5869 60
Collector-emitter voltage
2N5870
Emitter-base voltage Open collector 5 V
Open emitter
Open base
V
80
V
80
Tj Junction temperature 150 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.17
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5869 2N5870
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
hFE DC current gain IC=1.5A ; VCE=4V 20 100
fT Trainsistion frequency IC=0.5A ; VCE=10V;f=1MHz 4 MHz
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage I
Base-emitter saturation voltage IC=5A; IB=1A 1.5 V
Collector cut-off current VCB=ratedV
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 1.0 mA
2N5869 60
I
=0.1A ;IB=0
C
2N5870
=5A;IB=1A 1.0 V
C
CBO
2N5869 VCE=30V; IB=0
2N5870 V
=40V; IB=0
CE
80
; IB=0 1.0 mA
2.0 mA
V
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5869 2N5870
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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