Datasheet 2n5795-96 Datasheet

TECHNICAL DATA

PNP DUAL SILICON TRANSISTOR

Qualified per MIL-PRF-19500/496

Devices Qualified Level

2N5795

2N5796
2N5796U

MAXIMUM RATINGS

Ratings Symbol Value Units

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current

Total Power Dissipation @ TA = +250C

Operating & Storage Junction Temperature Range

1) Derate linearly 2.86 mW/0C for TA ≥ +250C

2) Derate linearly 3.43 mW/

0

C for TA ≥ +250C

V

CEO

V

CBO

V

EBO

I

C

One

Section

P

T

T

T

J,

stg

60 Vdc
60 Vdc

5.0 Vdc

600 mAdc

(1)

Both

Sections

0.5 0.6 W

-65 to +175

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

= 10 mAdc

I

C

Collector-Base Cutoff Current

= 50 Vdc

V

CB

V

= 60 Vdc

CBO

Emitter-Base Cutoff Current

= 3.0 Vdc

V

EB

V

= 5.0 Vdc

EB

V

(BR)CEO

I

CBO

I

EBO

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]

(2)

0

C

60 Vdc

JAN

JANTX

JANTXV

TO-78*

6 PIN SURFACE

MOUNT*

*See
MILPRF19500/496 for
package outline

10
10

100

10

ηAdc
µAdc

ηAdc
µAdc

42203

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2N5795, 2N5796 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS (1)

Forward-Current Transfer Ratio

= 100 µAdc, V

I

C

I

= 1.0 mAdc, V

C

I

= 10 mAdc, V

C

= 10 Vdc 2N5795

CE

= 10 Vdc

CE

= 10 Vdc

CE

IC = 150 mAdc, VCE = 10 Vdc

= 300 mAdc, VCE = 10 Vdc

I

C

I

= 150 mAdc, V

C

= 1.0 Vdc

CE

= 100 µAdc, V

I

C

I

= 1.0 mAdc, V

C

I

= 10 mAdc, V

C

= 10 Vdc 2N5796

CE

= 10 Vdc 2N5796U

CE

= 10 Vdc

CE

IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
I

= 150 mAdc, V

C

= 1.0 Vdc

CE

Collector-Emitter Saturation Voltage

= 150 mAdc, IB = 15 mAdc

I

C

IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage

= 150 mAdc, IB = 15 mAdc

I

C

IC = 500 mAdc, IB = 50 mAdc

DYNAMIC CHARACTERISTICS

Magnitude of Small-Signal Forward Current Transfer Ratio

= 20 mAdc, V

I

C

= 20 Vdc, f = 100 MHz

CE

Output Capacitance

= 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

V

CB

Input Capacitance

= 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz

V

EB

SWITCHING CHARACTERISTICS

Turn-On Time

= 30 Vdc; IC = 150 mAdc; I

V

CC

= 15 mAdc

B1

Turn-Off Time

= 30 Vdc; IC = 150 mAdc; I

V

CC

= IB2 = 15 mAdc

B1

1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]

h

FE

h

FE

40
40
40
40
20
20

75
100
100
100

150

300
50
50

Vdc

Vdc

ηs

ηs

V

CE(sat)

V

BE(sat)

hfe

C

obo

C

ibo

t

on

t

off

0.4

1.6

1.3

2.6

2.0 10

8.0 pF

25 pF

50

140

42203

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