
NPN Switching Transistor
• Sourced from process 22.
2N5772
2N5772
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings *
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
Collector-Emitter Voltage 15 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 5.0 V
Collector Current - Continued 300 mA
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BV
BV
BV
BV
I
CBO
I
CES
I
EBO
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 V
Collector-Emitter Breakdown Voltage IC = 100µA, VBE = 0 40 V
Collector-Base Breakdown Voltage IC = 100µA, IE = 0 40 V
Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 5.0 V
Collector Cutoff Current VCB = 20V, IE = 0 0.5 µA
Collector Cutoff Current VCE = 20V, VBE = 0
= 20V, VBE = 0, Ta = 65°C
V
CE
0.5
3.0
Emitter Cutoff Current VEB = 5.0V, IC = 0 100 µA
On Characteristics *
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 30mA, IB = 3.0mA
V
CE
(sat) Base-Emitter Saturation Voltage IC = 30mA, IB = 3.0mA
V
BE
DC Current Gain VCE = 0.4V, IC = 30mA
= 0.5V, IC = 100mA
V
CE
V
= 1.0V, IC = 300mA
CE
= 100mA, IB = 10mA
I
C
I
= 300mA, IB = 3.0mA
C
= 100mA, IB = 10mA
I
C
= 300mA, IB = 3.0mA
I
C
30
120
25
15
0.2
0.28
0.5
0.73 0.95
1.2
1.7
Small Signal Characteristics
C
cb
C
eb
h
fe
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Collector-Base Capacitance VCB = 5.0V, IE = 0, f = 1MHz 5.0 pF
Emitter-Base Capacitance VCB = 5.0V, IC = 0, f = 1MHz 8.0 pF
Small-Signal Current Gain IC = 300mA, VCE = 10V, f = 100MHz 3.5
µA
µA
V
V
V
V
V
V
©2004 Fairchild Semiconductor Corporation Rev. B, October 2004

2N5772
Electrical Characteristics
Ta=25°C unless otherwise noted
(Continued)
Symbol Parameter Test Condition Min. Max. Units
Switching Characteristics
t
s
t
on
t
off
Thermal Characteristics
Storage Time IC = 300mA, VCC = 10V
I
= IB2 = 30mA
Turn-On Time 18 ns
B1
20 ns
Turn-Off Time 28 ns
Ta=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
R
θJC
R
θJA
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 °C/W
350
2.8
mW
mW/°C
©2004 Fairchild Semiconductor Corporation Rev. B, October 2004

Package Dimensions
4.58
0.46
±0.10
+0.25
–0.15
2N5772
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
Rev. B, October 2004©2004 Fairchild Semiconductor Corporation

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2004 Fairchild Semiconductor Corporation
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13