Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5741 2N5742
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·For general–purpose switching
and power amplifier applications.
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N5741 -60
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -20 A
PC Collector power dissipation
Tj Junction temperature 150
2N5742
2N5741 -60
2N5742
Open emitter
Open base
T
=100℃
C
V
-100
V
-100
65 W
℃
T
Storage temperature -65~200
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 0.875 ℃/W
th j-c
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5741 2N5742
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
VBE Base-emitter on voltage IC=-10A ; VCE=-5V -1.5 V
I
CBO
I
CEX
I
EBO
h
FE-1
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=-10A; IB=-1A -1.0 V
Collector-emitter saturation voltage IC=-20A ;IB=-4A -3.0 V
Base-emitter saturation voltage IC=-10A; IB=-1A -1.8 V
Collector cut-off current VCB=Rated V
Collector cut-off current
Emitter cut-off current VEB=-5V; IC=0 -1.0 mA
DC current gain IC=-10A ; VCE=-5V 20 80
2N5741 -60
I
2N5742
=-0.2A ;IB=0
C
= Rated V
V
CE
TC=150℃
-100
; IE=0 -0.1 mA
CBO
; V
BE(off)
=1.5V
CEO
V
-0.5
-5.0
mA
h
DC current gain IC=-20A ; VCE=-5V 10
FE-2
fT Transition frequency IC=-1A ; VCE=-10V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5741 2N5742
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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