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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2N5740
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·Low Collector Saturation Voltage : V
CE(sat)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= -100V(Min.)
= -0.5V(Max.)@ IC= -5A
PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -10 A
ICM Collector Current-Peak -20 A
IB Base Current-Continuous -4 A
PC
TJ Junction Temperature 150 ℃
T
stg
Collector-Base Voltage -100 V
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -5 V
Collector Power Dissipation
@TC=100℃
Storage Temperature -65~200 ℃
20 W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Thermal Resistance,Junction to Ambient 4.56 ℃/W
PARAMETER MAX UNIT
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2N5740
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE(
V
BE(on)
I
CEO
I
CBO
I
EBO
h
FE-1
Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -100 V
Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -0.5 V
Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A -3.0 V
Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.2 V
)
sat
Base-Emitter On Voltage IC= -4A; VCE= -4V -1.5 V
Collector Cutoff Current VCE= -100V; IB= 0 -0.5 mA
Collector Cutoff Current VCB= -100V; IE= 0 -0.1 mA
Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA
DC Current Gain IC= -5A; VCE= -5V 20 80
PARAMETER CONDITIONS MIN MAX UNIT
h
DC Current Gain IC= -10A; VCE= -5V 4
FE-2
fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 10 MHz
isc Website：www.iscsemi.cn
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