Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N5732
DESCRIPTION ·
·With TO-3 package
·High current capability
APPLICATIONS
·For linear amplifier and inductive
switching applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 20 A
ICM Collector current-peak 30 A
PT Total power dissipation TC=25℃ 87.5 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.17 ℃/W
th j-C
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N5732
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
Collector-emitter sustaining voltage IC=0.2A; IB=0 80 V
Collector-emitter saturation voltage IC=10 A;IB=1 A 1.4 V
Collector-emitter saturation voltage IC=20 A;IB=4 A 4.0 V
VBE Base-emitter on voltage IC=10 A; VCE=4V 2.2 V
I
Collector cut-off current VCB=100V; IE=0 0.1 mA
CBO
I
Emitter cut-off current VEB=7V; IC=0 0.1 mA
EBO
h
DC current gain IC=5A ; VCE=2V 30 300
FE-1
h
DC current gain IC=20A ; VCE=4V 5
FE-2
fT Transition frequency IC=1A ; VCE=10V 30 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N5732
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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