Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5676
DESCRIPTION
·With TO-66 package
·High transition frequency
APPLICATIONS
·For use as high-frequency drivers
in audio amplifiers
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -125 V
CBO
V
Collector-emitter voltage Open base -100 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -2 A
PD Total Power Dissipation TC=25℃ 2 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 2.5 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5676
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
V
Collector-emitter sustaining voltage IC=-0.1A ;IB=0 -100 V
Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.5 V
CEsat
Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.2 V
BEsat
VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.2 V
I
Collector cut-off current VCE=-50V; IB=0 -0.5 mA
CEO
I
Collector cut-off current VCB=-125V; IE=0 -0.1 mA
CBO
I
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
EBO
h
DC current gain IC=-0.1A ; VCE=-5V 50
FE-1
h
DC current gain IC=-0.5A ; VCE=-5V 50 150
FE-2
fT Transition frequency IC=-100mA;VCE=10V 50 MHz
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2N5676
PACKAGE OUTLINE
3
Fig.2 outline dimensions
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