Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5664 2N5665
DESCRIPTION
·With TO-66 package
·High breakdown voltage
APPLICATIONS
·High speed switching and linear amplifier
·High-voltage operational amplifiers
·Switching regulators ,converters
·Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2N5664 250
V
CBO
V
CEO
V
EBO
IC Collector current 5.0 A
IB Base current 1.0 A
PT Total power dissipation
Collector-base voltage
2N5665
2N5664 200
Collector-emitter voltage
2N5665
Emitter-base voltage Open collector 6 V
Open emitter
Open base
T
=25℃
C
V
400
V
300
52.5 W
Tj Junction temperature 200
T
Storage temperature -65~200
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 5.0
th j-C
℃
℃
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5664 2N5665
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CES
Collector-emitter
breakdown voltage
Emitter-base breakdown voltage IE=10μA ; IC=0 6 V
Collector-emitter
saturation voltage
Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V
Base-emitter saturation
voltage
Base-emitter saturation voltage IC=5A; IB=1A 1.5 V
Collector cut-off current
2N5664 200
I
2N5665
=10mA ; IB=0
C
300
V
2N5664 IC=3A; IB=0.3A
0.4 V
2N5665 I
=3A; IB=0.6A
C
2N5664 IC=3A; IB=0.3A
1.2 V
2N5665 I
2N5664 VCE=200V;V
=3A; IB=0.6A
C
BE(off)
=1.5V
0.2 mA
2N5665 V
=300V;V
CE
BE(off)
=1.5V
2N5664 VCB=250V; IE=0
I
Collector cut-off current
CBO
2N5665 V
=400V; IE=0
CB
1.0 mA
2N5664 40
h
DC current gain
FE-1
2N5665
IC=0.5A ; VCE=2V
25
h
DC current gain
FE-2
h
DC current gain
FE-3
h
DC current gain IC=5A ; VCE=5V 5
FE-4
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 120 pF
ton Turn-on time VCC=30V;IC=1A;IB1=-IB2=30mA 0.25 μs
t
Turn-off time
off
2
2N5664 40 120
2N5665
IC=1A ; VCE=5V
25
75
2N5664 15
2N5665
IC=3A ; VCE=5V
10
2N5664 1.5
2N5665
VCC=30V;IC=1A;IB1=-IB2=50mA
2.0
μs
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5664 2N5665
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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