Datasheet 2n5631-d Datasheet [en, ro]

Page 1

2N5631

High−Voltage − High Power Transistors

High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

• High Collector Emitter Sustaining Voltage −

CEO(sus)

• High DC Current Gain − @ I

• Low Collector−Emitter Saturation Voltage −

CE(sat)

MAXIMUM RATINGS (1)

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

ООООООООО

Base Current − Continuous

Total Device Dissipation @ TC = 25_C

Derate above 25_C

ООООООООО

Operating and Storage Junction

Temperature Range

= 140 Vdc

= 15 (Min)

= 1.0 Vdc (Max) @ I

Rating

Peak

= 8.0 Adc

ÎÎ

= 10 Adc

Symbol

CEO

TJ, T

stg

Value

140

7.0

ÎÎ

5.0

200

1.14

ÎÎ

–65 to +200

Unit

Vdc

Adc

W/_C

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16 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

140 VOLTS, 200 WATTS

CASE 1−07

TO−204AA

(TO−3)

THERMAL CHARACTERISTICS (1)

Characteristic

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

200

150

100

, POWER DISSIPATION (WATTS)

Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.

Symbol

Max

0.875

Unit

_C/W

0 20 40 60 80 100 120 140 200

160 180

TC, TEMPERATURE (°C)

Figure 1. Power Derating

August, 2006 − Rev. 2

1 Publication Order Number:

2N5631/D

Page 2

2N5631

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (2)

= 200 mAdc, IB = 0)

ОООООООООООООООООООО

Collector−Emitter Cutoff Current

= 70 Vdc, IB = 0)

ОООООООООООООООООООО

Collector−Emitter Cutoff Current

= Rated VCB, V

ОООООООООООООООООООО

= Rated VCB, V

ОООООООООООООООООООО

Collector−Base Cutoff Current

ОООООООООООООООООООО

= Rated VCB, IE = 0)

= 1.5 Vdc)

EB(off)

= 1.5 Vdc, TC = 150_C)

EB(off)

Emitter−Base Cutoff Current

ОООООООООООООООООООО

= 7.0 Vdc, IC = 0)

ON CHARACTERISTICS (2)

DC Current Gain

= 8 Adc, VCE = 2.0 Vdc)

ОООООООООООООООООООО

= 16 Adc, VCE = 2.0 Vdc)

Collector−Emitter Saturation Voltage

= 10 Adc, IB = 1.0 Adc)

ОООООООООООООООООООО

= 16 Adc, IB = 4.0 Adc)

ОООООООООООООООООООО

Base−Emitter Saturation Voltage

= 10 Adc, IB = 1.0 Adc)

Base−Emitter On Voltage

ОООООООООООООООООООО

= 8.0 Adc, VCE = 2.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (3)

= 1.0 Adc, VCE = 20 Vdc, f

ОООООООООООООООООООО

= 0.5 MHz)

test

Output Capacitance 2N5631

= 10 Vdc, IE = 0, f = 0.1 MHz) 2N6031

Small−Signal Current Gain

ОООООООООООООООООООО

= 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)

*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v300 μs, Duty Cycle w 2.0%.

(2) f

= |hfe| • f

test

Symbol

CEO(sus)

ÎÎÎ

CEO

ÎÎÎ

CEX

ÎÎÎ

CBO

ÎÎÎ

EBO

ÎÎÎ

CE(sat)

ÎÎÎ

BE(sat)

BE(on)

ÎÎÎ

Min

140

−

4.0

−

1.0

−

Max

−

ÎÎ

2.0

ÎÎ

7.0

ÎÎ

2.0

ÎÎ

5.0

ÎÎ

−

ÎÎ

1.0

2.0

ÎÎ

1.8

1.5

ÎÎ

−

ÎÎ

500

1000

−

ÎÎ

Unit

Vdc

mAdc

−

Vdc

MHz

−

25 μs

+11 V

− 9.0 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

For PNP test circuit, reverse all polarities and D1.

Figure 2. Switching Times Test Circuit

+30 V

−4 V

MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE I MSD6100 USED BELOW I

≈ 100 mA

3.0

2.0

1.0

SCOPE

0.7

0.5

0.3

0.2

t, TIME (s)μ

0.1

0.07

0.05

0.03

0.2

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TJ = 25°C I

= 10

C/IB

= 30 V

td @ V

BE(off)

= 5.0 V

2N5631 2N6031

0.3 0.5 0.7 1.0 2.0 3.0 7.0 20

5.0 10

IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn−On Time

Page 3

1.0

0.5

2N5631

D = 0.5

0.2

0.1

0.05

RESISTANCE (NORMALIZED)

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

0.02

7.0

5.0

3.0

2.0

1.0

0.7 CURVES APPLY BELOW

, COLLECTOR CURRENT (AMP)

0.5

0.3

0.2

2.0

0.2

0.1

0.05

0.02

SINGLE PULSE

0.05

TJ = 200°C

SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C

RATED V

CEO

3.0 5.0 7.0 10 20 30 50 200 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.01

0.1 0.2 0.5 5.0 10 20 50 100 200 500 20001000

5.0ms

2N5631, 2N6031

1.0ms

0.5ms

1.0 2.0 t, TIME (ms)

Figure 4. Thermal Response

a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable

50ms

operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T v 200_C. T Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

100

limitations imposed by second breakdown.

θJC(t) = r(t) θ θJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

− TC = P

(pk) θJC

(t)

(pk)

DUTY CYCLE, D = t1/t

There are two limitations on the power handling ability of

− V

The data of Figure 5 is based on T

may be calculated from the data in

J(pk)

= 200_C; TC is

J(pk)

Figure 5. Active−Region Safe Operating Area

NPN 2N5631

5.0 TJ = 25°C I

3.0

2.0

1.0

0.7

0.5

0.2

0.5 3.0

0.3 0.7 1.0 2.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP)

C/IB

VCE = 30 V

5.0

= 10

= I

t, TIME (s)μ

Figure 6. Turn−Off Time

PNP 2N6031

4.0

3.0

2.0

1.0

0.6

0.4

0.3

0.2

0.5 3.0

0.3 0.7 1.0 2.0 7.0 10 20 I

, COLLECTOR CURRENT (AMP)

5.0

TJ = 25°C I

= I

IC/IB = 10 V

= 30 V

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Page 4

2N5631

NPN 2N5631

1000

700

500

300

200

C, CAPACITANCE (pF)

100

0.2

500

300 200

100

70 50

VR, REVERSE VOLTAGE (VOLTS)

TJ = 150°C

25°C

−55 °C

PNP 2N6031

2000

TJ = 25°C

1000

5.0 10 20 50 100 2000.5 1.0 2.0

700

500

C, CAPACITANCE (pF)

300

200

0.2 5.0 10 20 50 100 2000.5 1.0 2.0

, REVERSE VOLTAGE (VOLTS)

TJ = 25°C

Figure 7. Capacitance

500

TJ = +150°C

VCE = 2.0 V VCE = 10 V

300 200

100

VCE = 2.0 V

+25 °C

70 50

−55 °C

VCE = 10 V

, DC CURRENT GAIN

7.0

5.0

0.2

0.3 0.5 0.7 1.0 2.0 3.0 5.0 20

IC, COLLECTOR CURRENT (AMP)

2.0

1.6

1.2

IC = 4.0 A

0.8

0.4

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0

0.05

8.0 A 16 A

, BASE CURRENT (AMP)

, DC CURRENT GAIN

7.0

5.0

0.2

0.3 0.5 0.7 1.0 2.0 3.0 5.0 20

Figure 8. DC Current Gain

2.0

TJ = 25°C

1.6

1.2

IC = 4.0 A 8.0 A 16 A

0.8

0.4

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

3.0

0.0500.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0

Figure 9. Collector Saturation Region

, COLLECTOR CURRENT (AMP)

IB, BASE CURRENT (AMP)

TJ = 25°C

3.0

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Page 5

2N5631

PACKAGE DIMENSIONS

CASE 1−07

TO−204AA (TO−3)

ISSUE Z

2 PL

0.13 (0.005) Y

−T−

−Y−

SEATING PLANE

−Q−

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF B −−− 1.050 −−− 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N −−− 0.830 −−− 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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2N5631/D