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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2N5619
DESCRIPTION
·DC Current Gain : hFE= 30-90@IC= -2.5A
·Wide Area of Safe Operation
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
·Complement to Type 2N5620
APPLICATIONS
·Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= -100V(Min)
PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -5 A
PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature 150 ℃
T
stg
Collector-Base Voltage -120 V
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -5.5 V
50 W
Storage Temperature -65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 3.0 ℃/W
PARAMETER MAX UNIT
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2N5619
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
V
BE
I
CEO
I
CBO
I
EBO
h
FE
(sat)
(sat)
Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 -100 V
Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.5 V
Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.2 V
Collector Cutoff Current VCE= -100V; IB= 0 -1.0 mA
Collector Cutoff Current VCB= -120V; IE= 0 -0.1 mA
Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA
DC Current Gain IC= -2.5A ; VCE= -5V 30 90
PARAMETER CONDITIONS MIN MAX UNIT
fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 50 MHz
isc Website：www.iscsemi.cn
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