Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5612A
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 120 V
CBO
V
CEO
V
EBO
IC Collector current 5 A
PD Total power dissipation
Tj Junction temperature 150
T
stg
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
Storage temperature -65~150
25 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 4.37
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5612A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
Collector-emitter sustaining voltage IC=50mA ;IB=0 100 V
Collector-emitter saturation voltage IC=1A; IB=0.1A 0.5 V
CEsat
VBE Base-emitter on voltage IC=2.5A ; VCE=5V 1.5 V
I
Collector cut-off current VCB=Rated V
CBO
I
Collector cut-off current VCE= Rated V
CEO
I
Emitter cut-off current VEB=5V; IC=0 0.1 mA
EBO
hFE DC current gain IC=2.5A ; VCE=5V 30 150
fT Transition frequency IC=0.5A ; VCE=10V 60 MHz
; IE=0 0.1 mA
CBO
=0 1.0 mA
CEO,IB
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors 2N5612A
PACKAGE OUTLINE
3
Fig.2 outline dimensions
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