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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N5611A
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -120 V
CBO
V
Collector-emitter voltage Open base -100 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -5 A
T
PD Total power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
25 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 4.37 ℃/W
th j-c
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N5611A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
Collector-emitter sustaining voltage IC=-50mA ;IB=0 -100 V
Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.5 V
CEsat
VBE Base-emitter on voltage IC=-2.5A ; VCE=-5V -1.5 V
I
Collector cut-off current VCB=Rated V
CBO
I
Collector cut-off current VCE= Rated V
CEO
I
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
EBO
; IE=0 -0.1 mA
CBO
=0 -1.0 mA
CEO,IB
hFE DC current gain IC=-2.5A ; VCE=-5V 30 150
fT Transition frequency IC=-0.5A ; VCE=-10V 60 MHz
2
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N5611A
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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