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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors 2N5610
DESCRIPTION
·DC Current Gain : hFE= 70-200@IC= 2.5A
·Wide Area of Safe Operation
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
·Complement to Type 2N5609
APPLICATIONS
·Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= 80V(Min)
PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 5 A
PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature 150 ℃
T
stg
Collector-Base Voltage 100 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 6 V
25 W
Storage Temperature -65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 5.0 ℃/W
PARAMETER MAX UNIT
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors 2N5610
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
V
BE
I
CEO
I
CBO
I
EBO
h
FE
(sat)
(sat)
Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 80 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.2 V
Collector Cutoff Current VCE= 80V; IB= 0 1.0 mA
Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA
DC Current Gain IC= 2.5A ; VCE= 5V 70 200
PARAMETER CONDITIONS MIN MAX UNIT
fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 60 MHz
isc Website：www.iscsemi.cn
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