Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5559
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
APPLICATIONS
·For industrial and commercial equipment
including high fidelity audio amplifiers,
series and shunt regulators and power
switches applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 15 A
PC Collector power dissipation TC=25℃ 100 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.5 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5559
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
VBE Base-emitter on voltage IC=10A ; VCE=4V 5.7 V
I
CEO
I
CEX
I
EBO
hFE DC current gai n IC=4A ; VCE=2V 12 60
Collector-emitter sustaining voltage IC=0.2A ;IB=0 120 V
Collector-emitter saturation voltage IC=10A; IB=2A 5.0 V
Collector cut-off current VCE=140V; IB=0 5.0 mA
=120V; V
V
Collector cut-off current
Emitter cut-off current VEB=7V; IC=0 2.0 mA
CE
=150℃
T
C
BE(off)
=1.5V
2.0
10
mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5559
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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