Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5498
DESCRIPTION
·With TO-3 package
·High DC current gain
·Low saturation voltage
·High Safe Operating Area
APPLICATIONS
·Designed for high power audio, disk head
positioners and other linear applications.
·These devices can also be used in power
switching circuits such as relay or solenoid
drivers, DC-DC converters or inverters.
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
IB Base current 4 A
PD Total Power Dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 130 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
200 W
℃
T
Storage temperature -65~200
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.17
th j-c
℃
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5498
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CER
V
CEsat-1
V
CEsat-2
I
CEO
I
CEX
I
EBO
hFE DC current gai n IC=15A ; VCE=5V 10 50
fT Transition frequency IC=1A ; VCE=10V 1 MHz
Collector-emitter sustaining voltage IC=0.2A ;IB=0 130 V
Collector-emitter sustaining voltage IC=0.2A ;RBE=100Ohm 150 V
Collector-emitter saturation voltage IC=8A; IB=0.8A 1.4 V
Collector-emitter saturation voltage IC=15A ;IB=3A 4.0 V
Collector cut-off current VCE=130V; IB=0 2.0 mA
=130V; V
V
Collector cut-off current
Emitter cut-off current VEB=7V; IC=0 1.0 mA
CE
TC=150℃
BE(off)
=1.5V
10.0
2.0
mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5498
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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