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INCHANGE Semiconductor isc Product Specification
oltage
oltage
isc Silicon NPN Power Transistor 2N5491
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·Low Saturation Voltage: V
CE (sat)
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
= 40V(Min)
= 1V(Max)@IC= 2.0A
SYMBOL
V
CBO
V
CEV
V
CER
V
CEO
V
EBO
IC Collector Current-Continuous 7 A
IB Base Current 3 A
PC
TJ Junction Temperature 150 ℃
T
stg
Collector-Base V
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter V
Emitter-Base Voltage 5 V
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -65~150 ℃
PARAMETER VALUE UNIT
60 V
60 V
50 V
40 V
1.8
50
THERMAL CHARACTERISTICS
W
SYMBOL
R
th j-c
Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W
Thermal Resistance, Junction to Case 2.5 ℃/W
isc Website：www.iscsemi.cn
PARAMETER MAX UNIT
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N5491
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CER(SUS)
V
CEV(SUS)
V
CE
V
BE(on)
I
CEV
I
CER
I
EBO
(sat)
Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 40 V
Collector-Emitter Sustaining Voltage IC= 100mA ; RBE= 100Ω 50 V
Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.5V 60 V
Collector-Emitter Saturation Voltage IC= 2 A; IB= 0.2A 1.0 V
Base-Emitter On Voltage IC= 2A ; VCE= 4V 1.1 V
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
PARAMETER CONDITIONS MIN MAX UNIT
VCE= 55V; VBE= -1.5V
VCE= 55V; VBE= -1.5V;TC= 125℃
VCE= 40V; RBE= 100Ω
VCE= 40V; RBE= 100Ω; TC= 125℃
1.0
5.0
2.0
3.5
hFE DC Current Gain IC= 2A ; VCE= 4V 20 100
mA
mA
fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V 0.8 MHz
Switching Times
ton
Turn-On Time 5 μs
IC= 2A; IB1= -IB2= 0.2A
Turn-Off Time
t
off
15 μs
isc Website：www.iscsemi.cn
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