Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N5468 2N5469
DESCRIPTION
·With TO-66 package
·High-voltage capability
·Fast switching speeds
·Low saturation voltage
APPLICATIONS
·They are intended for use in off-line power
supplies ,inverter and converter circuits
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-peak 5 A
IB Base current 1 A
PD Total Power Dissipation TC=25℃ 70 W
Collector-base voltage
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
2N5468 500
2N5469
Open emitter
V
700
Tj Junction temperature 150 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 5.0 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N5468 2N5469
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEV
I
EBO
Collector-emitter sustaining voltage IC=0.2A ;IB=0 400 V
Collector-emitt er saturation voltage IC=2A; IB=0.4A 2.0 V
Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V
Collector cut-off current VCB=ratedV
V
=ratedV
Collector cut-off current
CE
=125℃
T
C
; IE=0 1.0 mA
CBO
CEO;VBE(off)
=1.5V
1.0
5.0
mA
Emitter cut-off current VEB=5V; IC=0 1.0 mA
hFE DC current gain IC=3A ; VCE=5V 15 60
fT Trainsistion frequency IC=1A ; VCE=10V;f=1MHz 2.5 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N5468 2N5469
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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