Datasheet 2n5457_2n5458 Datasheet

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Page 1

2N5457, 2N5458

JFETs - General Purpose

N−Channel − Depletion

N−Channel Junction Field Effect Transistors, depletion mode

(Type A) designed for audio and switching applications.

Features

• N−Channel for Higher Gain

• Drain and Source Interchangeable

• High AC Input Impedance

• High DC Input Resistance

• Low Transfer and Input Capacitance

• Low Cross−Modulation and Intermodulation Distortion

• Plastic Encapsulated Package

• Pb−Free Packages are Available*

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1 DRAIN

GATE

2 SOURCE

MARKING DIAGRAM

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain−Source Voltage V

Drain−Gate Voltage V

Reverse Gate −Source Voltage V

Gate Current I

Total Device Dissipation @ TA = 25°C Derate above 25°C

Operating Junction Temperature T

Storage Temperature Range T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

GSR

stg

25 Vdc

−25 Vdc

10 mAdc

310

2.82

135 °C

−65 to +150 °C

mW/°C

545x

AYWWG

STRAIGHT LEAD

BULK PACK

2N545x = Device Code

A = Assembly Location Y = Year WW = Work Week G =Pb−Free Package

(Note: Microdot may be in either location)

BENT LEAD

TAPE & REEL

AMMO PACK

x = 7 or 8

TO−92 CASE 29 STYLE 5

ORDERING INFORMATION

Device Package Shipping

2N5457 TO−92 1000 Units/Box

2N5457G TO−92

(Pb−Free)

2N5458 TO−92 1000 Units/Box

1000 Units/Box

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

February, 2010 − Rev. 6

1 Publication Order Number:

2N5458G TO−92

(Pb−Free)

1000 Units/Box

2N5457/D

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2N5457, 2N5458

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage

= −10 mAdc, VDS = 0)

Gate Reverse Current

= −15 Vdc, VDS = 0)

= −15 Vdc, VDS = 0, TA = 100°C)

Gate−Source Cutoff Voltage 2N5457

= 15 Vdc, iD = 10 nAdc) 2N5458

Gate−Source Voltage

= 15 Vdc, iD = 100 mAdc) 2N5457

= 15 Vdc, iD = 200 mAdc) 2N5458

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current (Note 1) 2N5457

(VDS = 15 Vdc, VGS = 0) 2N5458

DYNAMIC CHARACTERISTICS

Forward Transfer Admittance (Note 1) 2N5457

(VDS = 15 Vdc, VGS = 0, f = 1 kHz) 2N5458

Output Admittance Common Source (Note 1)

= 15 Vdc, VGS = 0, f = 1 kHz)

Input Capacitance

= 15 Vdc, VGS = 0, f = 1 kHz)

Reverse Transfer Capacitance

= 15 Vdc, VGS = 0, f = 1 kHz)

1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.

Symbol Min Typ Max Unit

(BR)GSS

GSS

GS(off)

DSS

|Yfs| 1000

−25 − − Vdc

−

−0.5

−1.0

−

1.0

2.0

1500

−

−2.5

−3.5

3.0

6.0

3000 4000

-1.0

−200

−6.0

−7.0

−

5.0

9.0

5000 5500

nAdc

Vdc

mAdc

mmhos

|Yos|

− 10 50

iss

rss

− 4.5 7.0 pF

− 1.5 3.0 pF

mmhos

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Page 3

TYPICAL CHARACTERISTICS

NF, NOISE FIGURE (dB)

2N5457, 2N5458

For 2N5457 Only

VDS = 15 V V

= 0

f = 1 kHz

Figure 1. Noise Figure versus Source Resistance

1.2

1.0

0.8

0.6

0.4

, DRAIN CURRENT (mA)

0.2

0 5 10 15 20

^ -1.2 V

GS(off)

VDS, DRAIN-SOURCE VOLTAGE (VOLTS)

Figure 2. Typical Drain Characteristics

0.001 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms)

1.2

1.0

0.8

0.6

0.4

, DRAIN CURRENT (mA)

0.2

-1.2

GS(off)

VGS = 0 V

-0.2 V

-0.4 V

-0.6 V

-0.8 V

-1.0 V

Figure 3. Common Source Transfer Characteristics

^ -1.2 V

VDS = 15 V

-0.8 -0.4 0

VGS, GATE-SOURCE VOLTAGE (VOLTS)

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Page 4

2N5457, 2N5458

TYPICAL CHARACTERISTICS

For 2N5457 Only

, DRAIN CURRENT (mA)

I, DRAIN CURRENT (mA)

^ -3.5 V

GS(off)

510152025

VDS, DRAIN-SOURCE VOLTAGE (VOLTS)

Figure 4. Typical Drain Characteristics

GS(off)

^ -5.8 V

VGS = 0 V

-1 V

-2 V

-3 V

VGS = 0 V

-1 V

-2 V

, DRAIN CURRENT (mA)

^ -3.5 V

GS(off)

VDS = 15 V

-5

-4 VGS, GATE-SOURCE VOLTAGE (VOLTS)

-3 -2 -1 0

Figure 5. Common Source Transfer

Characteristics

GS(off)

^ -5.8 V

VDS = 15 V

0 5 10 15 20 25

VDS, DRAIN-SOURCE VOLTAGE (VOLTS)

Figure 6. Typical Drain Characteristics

NOTE: Note: Graphical data is presented for dc conditions. Tabular data is given

for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher I

-3 V

-4 V

-5 V

, DRAIN CURRENT (mA)

-7

units reduces I

DSS

-6 -5 -4 -3 -2 -1 VGS, GATE - SOURCE VOLTAGE (VOLTS)

Figure 7. Common Source Transfer

Characteristics

DSS

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Page 5

2N5457, 2N5458

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

SEATING PLANE

STRAIGHT LEAD

BULK PACK

SECTION X−X

BENT LEAD

TAPE & REEL

AMMO PACK

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 R 0.115 --- 2.93 --- V 0.135 --- 3.43 ---

TYLE 5:

PIN 1. DRAIN

2. SOURCE

3. GATE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80

J 0.39 0.50 K 12.70 --- N 2.04 2.66

P 1.50 4.00 R 2.93 ---

V 3.43 ---

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N5457/D