Page 1
SEMICONDUCTOR TECHNICAL DATA
N–Channel — Depletion
GATE
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Reverse Gate–Source Voltage V
Gate Current I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature Range T
Storage Channel Temperature Range T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
DS
DG
GSR
G
P
D
J
stg
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –10 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Gate–Source Voltage
(VDS = 15 Vdc, ID = 100 mAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (1)
(VDS = 15 Vdc, VGS = 0)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance Common Source (1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance Common Source (1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
1. Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%.
25 Vdc
25 Vdc
–25 Vdc
10 mAdc
310
2.82
125 °C
–65 to +150 °C
Order this document
by 2N5457/D
1 DRAIN
*Motorola Preferred Device
3
2 SOURCE
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
mW
mW/°C
V
(BR)GSS
I
GSS
V
GS(off)
V
GS
I
DSS
yfs 1000 — 5000
yos — 10 50
C
iss
C
rss
–25 — — Vdc
—
—
–0.5 — –6.0 Vdc
— –2.5 — Vdc
1.0 3.0 5.0 mAdc
— 4.5 7.0 pF
— 1.5 3.0 pF
—
—
–1.0
–200
nAdc
m
mhos
m
mhos
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
Page 2
2N5457
TYPICAL CHARACTERISTICS
5
4
3
2
NF, NOISE FIGURE (dB)
1
0
0.01
0.1 1.0 10
Figure 1. Noise Figure versus Frequency
1.2
V
^ –1.2 V
GS(off)
1.0
0.8
0.6
f, FREQUENCY (kHz)
VDS = 15 V
VGS = 0
RS = 1 M
VGS = 0 V
–0.2 V
–0.4 V
14
12
W
100
10
8
6
NF, NOISE FIGURE (dB)
4
2
0
0.001 0.01 0.1 1.0
RS, SOURCE RESISTANCE (Megohms)
VDS = 15 V
VGS = 0
f = 1 kHz
10
Figure 2. Noise Figure versus Source
Resistance
1.2
V
^ –1.2 V
GS(off)
1.0
0.8
VDS = 15 V
0.6
0.4
, DRAIN CURRENT (mA)
D
I
0.2
0
0 5 10 15 20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. T ypical Drain Characteristics
–0.6 V
–0.8 V
–1.0 V
25
0.4
, DRAIN CURRENT (mA)
D
I
0.2
0
–1.2
–0.8 –0.4 0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Transfer
Characteristics
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Page 3
TYPICAL CHARACTERISTICS
2N5457
5
4
3
2
, DRAIN CURRENT (mA)
D
I, DRAIN CURRENT (mA)
1
0
0
10
8
6
4
VGS = 0 V
V
^ –3.5 V
GS(off)
–1 V
–2 V
–3 V
510152025
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 5. T ypical Drain Characteristics
VGS = 0 V
V
^ –5.8 V
GS(off)
–1 V
–2 V
5
4
3
2
, DRAIN CURRENT (mA)
D
I
1
0
–5
10
8
6
4
V
^ –3.5 V
GS(off)
VDS = 15 V
–4
VGS, GATE–SOURCE VOLTAGE (VOLTS)
–3 –2 –1 0
Figure 6. Common Source Transfer
Characteristics
V
^ –5.8 V
GS(off)
VDS = 15 V
D
I
2
0
0 5 10 15 20 25
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 7. T ypical Drain Characteristics
Note: Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630
ms, Duty Cycle = 10%). Under dc conditions, self heating in higher I
–3 V
–4 V
–5 V
DSS
, DRAIN CURRENT (mA)
D
I
2
0
units reduces I
–7
–6 –5 –4 –3 –2 –1
VGS, GATEā–āSOURCE VOLTAGE (VOLTS)
Figure 8. Common Source Transfer
Characteristics
.
DSS
0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
Page 4
2N5457
SEATING
PLANE
P ACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A
B
R
P
L
XX
V
1
F
G
H
K
D
J
C
SECTION X–X
N
N
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––
MILLIMETERSINCHES
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
How to reach us:
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N5457/D
*2N5457/D*
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