Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2N5344
DESCRIPTION
·High Collector-Emitter Sustaining Voltage: V
CEO(SUS)
·High Switching Speed
·High Current-Gain Bandwidth Product-
: fT= 60MHz(Min)@ IC= -0.1A
APPLICATIONS
·Designed for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= -250V(Min)
PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -1.0 A
IB Base Current-Continuous -0.5 A
PD Total Power Dissipation@TC=25℃ 40 W
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage -250 V
Collector-Emitter Voltage -250 V
Emitter-Base Voltage -5 V
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 4.38 ℃/W
PARAMETER MAX UNIT
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2N5344
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(
V
BE(
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-Emitter Sustaining Voltage IC= -10mA ; IB= 0 -250 V
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A -3.0 V
)
sat
Base-Emitter Saturation Voltage IC= -1A; IB= -0.2A -1.5 V
)
sat
Collector Cutoff Current VCB= -250V; IE= 0 -0.1 mA
Collector Cutoff Current
Emitter Cutoff Current VEB= 5V; IC= 0 -0.1 mA
DC Current Gain IC= -0.5A ; VCE= -5V 25 100
DC Current Gain IC= -1A ; VCE= -5V 7
PARAMETER CONDITIONS MIN MAX UNIT
VCE= -225V; V
VCE= -225V; V
= -1.5V
BE(
)
off
= -1.5V,TC= 150℃
BE(
)
off
-0.1
-1.0
fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -20V 60 MHz
COB Output Capacitance IE= 0; VCB= -10V 200 pF
mA
Switching times
ton
t
off
Turn-On Time 0.2 μs
Turn-Off Time
IC= -0.5A, IB1= -IB2= -0.05A;
VCC= -100V
0.7 μs
isc Website：www.iscsemi.cn
2
Loading...