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INCHANGE Semiconductor isc Product Specification
oltage
isc Silicon NPN Power Transistor 2N5298
DESCRIPTION
·Collector-Emitter Sustaining Voltage: V
CEO(SUS)
·Collector-Emitter Saturation Voltage-
: V
CE(sat)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for medium power switching amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
= 60V(Min)
= 1.0V(Max)@ IC= 1.5A, IB= 0.15A
SYMBOL
V
CBO
V
CEO
V
CEV
V
CER
V
EBO
IC Collector Current-Continuous 4.0 A
IB Base Current 2.0 A
PC
TJ Junction Temperature 150 ℃
T
stg
Collector-Base V
Collector-Emitter Voltage 60 V
Collector-Emitter Voltage 80 V
Collector-Emitter Voltage
RBE= 100Ω
Emitter-Base Voltage 5 V
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -65~150
PARAMETER VALUE UNIT
80 V
70 V
36 W
THERMAL CHARACTERISTICS
℃
SYMBOL
R
th j-c
Thermal Resistance, Junction to Case 3.47 ℃/W
isc Website：www.iscsemi.cn
PARAMETER MAX UNIT
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N5298
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEV
V
CER
V
CE(
V
BE(on)
I
CEV
I
CER
I
EBO
h
FE
Collector-Emitter Sustaining Voltage IC=100mA ;IB= 0 60 V
Collector-Emitter Sustaining Voltage IC=100mA ;VBE= 1.5V 80 V
Collector-Emitter Sustaining Voltage IC=100mA ;RBE= 100Ω 70 V
Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.0 V
)
sat
Base-Emitter On Voltage IC= 1.5A; VCE= 4V 1.5 V
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 1.5A; VCE= 4V 20 80
PARAMETER CONDITIONS MIN MAX UNIT
VCE= 65V; VBE= 1.5V;
VCE= 65V; VBE= 1.5V; TC= 150℃
VCE= 50V; RBE= 100Ω
VCE= 50V; RBE= 100Ω; TC= 150℃
0.5
3.0
0.5
2.0
mA
mA
fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 4V 0.8 MHz
Switching Times
ton
Turn-On Time 5.0 μs
IC= 1.5A; IB= 0.15A; VCC= 30V
Turn-Off Time
t
off
15 μs
isc Website：www.iscsemi.cn
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