Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5264
DESCRIPTION
·With TO-3 package
·High speed switching
·High reliability
APPLICATIONS
·Switching regulators
·DC-DC convertor
·Solid state relay
·General purpose power amplifiers
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
IB Base current 2 A
PT Total power dissipation
Tj Junction temperature 165
T
stg
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 180 V
Emitter-base voltage Open collector 7 V
T
=25℃
c
Storage temperature -65~200
87 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 1.0
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5264
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
fT Transition frequency IC=1A ; VCE=10V 50 MHz
Collector-emitter sustaining voltage IC=0.1A ; IB=0 180 V
Collector-emitter saturation voltage IC=7A; IB=1.4A 1.5 V
Base-emitter saturation voltage IC=7A; IB=1.4A 1.2 V
Collector cut-off current VCB=300V; IE=0 1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 30 300
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5264
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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