Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5241
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·Switching regulator
·Inverters
·Solenoid and relay drivers
·Motor controls
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
PT Total power dissipation
Tj Junction temperature 165
T
stg
Collector-base voltage Open emitter 400 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 5 V
T
=25℃
c
Storage temperature -65~200
125 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 1.46
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5241
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
Collector-emitter sustaining voltage IC=0.1A ; IB=0 400 V
Collector-emitter saturation voltage IC=2A; IB=0.4A 2.0 V
Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V
V
=400V; IE=0
Collector cut-off current
Collector cut-off current VCE=400V; IB=0 5.0 mA
Emitter cut-off current VEB=5V; IC=0 1.0 mA
DC current gain IC=2.5A ; VCE=5V 15 35
CB
=125℃
T
C
0.2
2.0
mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5241
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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