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INCHANGE Semiconductor isc Product Specification
oltage
oltage
isc Silicon NPN Power Transistor 2N5240
DESCRIPTION
·High Voltage: V
CEO(SUS)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in series regulators, power amplifiers,
inverters, deflection circuits, switching regulators, and
high-voltage bridge amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
= 300V(Min)
SYMBOL
V
CBO
V
CER(SUS)
V
CEO(SUS)
V
EBO
IC Collector Current-Continuous 5 A
IB Base Current 2 A
PC
TJ Junction Temperature 200 ℃
T
stg
Collector-Base V
Collector-Emitter Voltage
RBE≤50Ω
Collector-Emitter V
Emitter-Base Voltage 6 V
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -65~200
PARAMETER VALUE
375 V
350 V
300 V
100 W
THERMAL CHARACTERISTICS
UNIT
℃
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 1.75 ℃/W
isc Website：www.iscsemi.cn
PARAMETER MAX UNIT
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N5240
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEO(SUS)
V
(BR)EBO
V
CE(
V
CE(
V
BE(on)
I
CEV
I
CEO
sat
sat
Collector-Emitter Sustaining Voltage IC= 0.2A ;IB= 0 300
Collector-Emitter Sustaining Voltage IC= 0.2A ;RBE≤ 50Ω 350
Emitter-Base Breakdown Voltage IE= 0.02A; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A 2.5 V
)-1
Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.125A 5.0 V
)-2
Base-Emitter On Voltage IC= 2A ; VCE= 10V 3.0 V
Collector Cutoff Current
Collector Cutoff Current VCE= 200V; IB= 0 2 mA
PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
VCE=375V; VBE= -1.5V
VCE=300V; VBE= -1.5V;TC= 150℃
2
mA
3
I
Emitter Cutoff Current VEB= 6V; IC=0 5 mA
EBO
h
DC Current Gain IC= 0.4A; VCE= 10V 20 80
FE-1
h
DC Current Gain IC= 2A; VCE= 10V 20 80
FE-2
h
DC Current Gain IC= 4.5A; VCE= 10V 5
FE-3
fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 2 MHz
COB Output Capacitance
IE= 0; VCB= 10V; f
= 1.0MHz
test
250 pF
isc Website：www.iscsemi.cn
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