Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5239
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Switching regulator
·Inverters
·Power amplifiers
·Deflection circuits
·High-voltage bridge amplifiers
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IB Base current 2 A
PT Total power dissipation Tc=25℃ 100 W
Tj Junction temperature 200 ℃
T
stg
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 225 V
Emitter-base voltage Open collector 6 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 1.75
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5239
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
VBE Base-emitter on voltage IC=2A ; VCE=10V 3.0 V
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE -2
Collector-emitter sustaining voltage IC=0.2A ; IB=0 225 V
Emitter-base breakdown voltage IE=20mA ; IC=0 6 V
Collector-emitter saturation voltage IC=2A; IB=0.25A 2.5 V
Collector-emitter saturation voltage IC=4.5A; IB=1.125A 5.0 V
V
=300V; VBE=-1.5V
Collector cut-off current
Collector cut-off current VCE=200V; IB=0 5.0 mA
Emitter cut-off current VEB=5V; IC=0 5.0 mA
DC current gain IC=0.4A ; VCE=10V
DC current gain IC=2A ; VCE=10V
CE
TC=150℃
20 80
4.0
5.0
mA
h
DC current gain IC=4.5A ; VCE=10V 5
FE-3
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF
fT Transition frequency IC=0.2A ; VCE=10V 2 MHz
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5239
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Loading...