Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5157
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·Switching regulator
·Inverters
·Solenoid and relay drivers
·Motor controls
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3.5 A
PT Total power dissipation Tc=25℃ 100 W
Tj Junction temperature 165 ℃
T
stg
Collector-base voltage Open emitter 700 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 1.0
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5157
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
fT Transition frequency IC=1A ; VCE=10V;f=5.0MHz 2.8 MHz
Collector-emitter sustaining voltage IC=0.1A ; IB=0 500 V
Collector-emitter saturation voltage IC=3A; IB=0.5A 1.2 V
Base-emitter saturation voltage IC=3A; IB=0.5A 1.5 V
=700V; IE=0
V
Collector cut-off current
Collector cut-off current VCE=500V; IB=0 5.0 mA
Emitter cut-off current VEB=7V; IC=0 1.0 mA
DC current gain IC=1A ; VCE=5V 30 90
CB
=125℃
T
C
0.2
2.0
mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5157
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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