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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N5108
DESCRIPTION
·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = 50mA
·Low Saturation Voltage
·Good Linearity of hFE
APPLICATIONS
·Designed for general purpose Class C amplifier applications
up to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
IC Collector Current 0.4 A
PC
Tj Junction Temperature 175 ℃
T
stg
Collector-Base Voltage 55 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 4 V
Collector Power Dissipation
@TC=25℃
Collector Power Dissipation
@Ta=25℃
Storage Temperature Range -55~175
PARAMETER VALUE UNIT
3.5
1.0
W
℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N5108
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CE(
I
CBO
I
EBO
hFE DC Current Gain IC= 10mA; VCE= 10V 40 150
fT Current-Gain—Bandwidth Product IC= 50mA;VCE= 10V;f= 200MHz 1200
COB Output Capacitance
Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V
)
sat
Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA
PARAMETER CONDITIONS MIN TYP. MAX UNIT
MHz
IE= 0;VCB= 28V; f
= 1.0MHz
test
3.3 pF
isc Website：www.iscsemi.cn
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