Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5038 2N5039
DESCRIPTION
·With TO-3 package
·High speed
·Low collector saturation voltage
APPLICATIONS
·They are especially intended for high current
and fast switching applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 20 A
ICM Collector current-peak 30 A
IB Base current 5 A
PD Total Power Dissipation TC=25℃ 140 W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 7 V
2N5038 150
2N5039
2N5038 90
2N5039
Open emitter
Open base
120
V
V
75
Tj Junction temperature 200 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.25 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5038 2N5039
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
VBE Base-emitter on voltage
I
CEO
I
CEX
I
EBO
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
Collector-emitter saturation voltage IC=20A ;IB=5A 2.5 V
Base-emitter saturation voltage IC=20A ;IB=5A 3.3 V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5038 90
I
=0.2A ;IB=0
C
2N5039
2N5038 IC=12A ;IB=1.2A
2N5039 IC=10A ;IB=1A
2N5038 IC=12A ; VCE=5V
2N5039 I
2N5038 VCE=70V; IB=0
2N5039 VCE=55V; IB=0
2N5038
2N5039
2N5038 5
2N5039
=10A ; VCE=5V
C
V
=140V; VBE=-1.5V
CE
VCE=100V; VBE=-1.5V ;TC=150℃
V
=110V; VBE=-1.5V
CE
VCE=85V; VBE=-1.5V TC=150℃
VEB=5V; IC=0
75
1.0 V
1.8 V
20 mA
V
5.0
10
5.0
10
15
mA
mA
h
DC current gain IC=2A ; VCE=5V 50 250
FE-1
h
DC current gain
FE-2
I
s/b
Switching times
tr Rise time 0.5 μs
ts Storage time 1.5 μs
tf Fall time
Second breakdown collector current
2
2N5038 IC=12A ; VCE=5V
2N5039 I
=10A ; VCE=5V
C
=28V,
V
CE
=45V(t=1.0s Nonrepetitive)
V
CE
For 2N5038
=12A ;IB1=- IB2=1.2A ;VCC=30V
I
C
For 2N5039
IC=10A ;IB1=- IB2=1A ;Vcc=30V
20 100
5
0.9
0.5 μs
A
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANG SEMICONDUCTOR
Silicon NPN Power Transistors 2N5038 2N5039
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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