Datasheet 2N4921, 2N4922, 2N4923 Datasheet (ON Semiconductor)

2N4921, 2N4922, 2N4923

Î

2N4923 is a Preferred Device

Medium−Power Plastic NPN Silicon Transistors

These high−performance plastic devices are designed for driver

circuits, switching, and amplifier applications.

Features

• Low Saturation Voltage − V

= 0.6 Vdc (Max) @ IC = 1.0 A

CE(sat)

• Excellent Power Dissipation Due to Thermopad Construction −

PD = 30 W @ TC = 25_C

• Excellent Safe Operating Area

• Gain Specified to I

= 1.0 A

C

• Complement to PNP 2N4918, 2N4919, 2N4920

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage 2N4921

ОООООООООО

2N4922 2N4923

Collector−Emitter Voltage 2N4921

ОООООООООО

2N4922

2N4923 Emitter Base Voltage Collector Current − Continuous (Note 1)

ОООООООООО

Base Current − Continuous Total Power Dissipation @ TC = 25_C

Derate above 25_C

Operating and Storage Junction

ОООООООООО

Temperature Range

THERMAL CHARACTERISTICS (Note 2)

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. The 1.0 A maximum IC value i s b ased u pon J EDEC c urrent g ain r equirements. The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6).

2. Recommend use of thermal compound for lowest thermal resistance.

*Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

V

CEO

Î

V

Î

V

I

Î

I

P

TJ, T

Î

q

CB

EB C

B

D

stg

JC

40 60

ÎÎ

80 40

ÎÎ

60 80

5.0

1.0

ÎÎ

3.0

1.0 30

0.24

– 65 to +150

ÎÎ

4.16

Vdc

ÎÎ

Vdc

ÎÎ

Vdc Adc

ÎÎ

Adc

W

mW/_C

_C

ÎÎ

_C/W

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1.0 AMPERE

GENERAL PURPOSE

POWER TRANSISTORS

40−80 VOLTS, 30 WATTS

TO−225

CASE 77

3

2

1

MARKING DIAGRAM

1

Y = Year WW = Work Week 2N492x = Device Code

G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

2N4921 TO−225 500 Units / Box 2N4921G TO−225

2N4922 TO−225 500 Units / Box 2N4922G TO−225

2N4923 TO−225 500 Units / Box 2N4923G TO−225

Preferred devices are recommended choices for future use and best overall value.

(Pb−Free)

STYLE 1

YWW

2

N492xG

x = 1, 2, or 3

500 Units / Box

January, 2006 − Rev. 11

1 Publication Order Number:

2N4921/D

2N4921, 2N4922, 2N4923

Î

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 0.1 Adc, IB = 0) 2N4921

ООООООООООООООООООО

2N4922 2N4923

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0) 2N4921 (VCE = 30 Vdc, IB = 0) 2N4922

ООООООООООООООООООО

(VCE = 40 Vdc, IB = 0) 2N4923

ООООООООООООООООООО

Collector Cutoff Current

ООООООООООООООООООО

(VCE = Rated V (VCE = Rated V

ООООООООООООООООООО

CEO CEO

, V , V

= 1.5 Vdc)

EB(off)

= 1.5 Vdc, TC = 125_C

EB(off)

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

Emitter Cutoff Current

ООООООООООООООООООО

(VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 50 mAdc, VCE = 1.0 Vdc)

ООООООООООООООООООО

(IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc)

ООООООООООООООООООО

Collector−Emitter Saturation Voltage (Note 3)

(IC = 1.0 Adc, IB = 0.1 Adc)

Base−Emitter Saturation Voltage (Note 3)

ООООООООООООООООООО

(IC = 1.0 Adc, IB = 0.1 Adc)

Base−Emitter On Voltage (Note 3)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ООООООООООООООООООО

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 100 kHz)

ООООООООООООООООООО

Small−Signal Current Gain

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

ООООООООООООООООООО

3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%. *Indicates JEDEC Registered Data.

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CEX

ÎÎÎ

I

CBO

I

EBO

ÎÎÎ

h

FE

ÎÎÎ

V

CE(sat)

V

BE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

f

T

C

ob

ÎÎÎ

h

fe

ÎÎÎ

Min

40

ÎÎ

60 80

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

40

ÎÎ

30 10

ÎÎ

−

ÎÎ

−

ÎÎ

3.0

−

ÎÎ

25

ÎÎ

Max

−

Î

−

Î

0.5

Î

0.5

Î

0.1

0.5

Î

0.1

Î

1.0

−

Î

150

−

Î

0.6

Î

1.3

Î

−

100

Î

−

Î

Unit

Vdc

ÎÎ

mAdc

ÎÎ

mAdc

ÎÎ

mAdc

ÎÎ

−

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

MHz

pF

ÎÎ

−

ÎÎ

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2

2N4921, 2N4922, 2N4923

40

30

20

10

, POWER DISSIPATION (WATTS)

D

P

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

APPROX

V

in

V

BE(off)

+11 V

TURN−ON PULSE

t

1

V

CC

V

in

Cjd<<C

t

APPROX

3

SCOPE

+11 V

V

in

APPROX 9.0 V

t

2

TURN−OFF PULSE

Figure 2. Switching Time Equivalent Circuit

t, TIME (s)μ

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

t

d

VCC = 30 V V

BE(off)

10

VCC = 30 V

= 0

VCC = 30 V

IC/IB = 10, UNLESS NOTED

IC/IB = 20

VCC = 60 V

t

r

VCC = 60 V V

= 2.0 V

BE(off)

20 30 50 70 100 200 700 1000

IC, COLLECTOR CURRENT (mA)

R

C

R

B

eb

−4.0 V

t1 ≤ 15 ns 100 < t2 ≤ 500 ms t3 ≤ 15 ns

DUTY CYCLE ≈ 2.0%

RB and RC varied to obtain desired current levels

TJ = 25°C TJ = 150°C

300 500

Figure 3. Turn−On Time

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3

1.0

0.7

D = 0.5

0.5

0.3

0.2

0.1

0.05

0.1

0.07

0.01

0.05

r(t), TRANSIENT THERMAL

0.03

SINGLE PULSE

RESISTANCE (NORMALIZED)

0.02

0.01

0.02 0.03

2N4921, 2N4922, 2N4923

P

qJC(t) = r(t) q qJC = 4.16°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500 t, TIME (ms)

− TC = P

JC

(pk) qJC

1

(t)

Figure 4. Thermal Response

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

, COLLECTOR CURRENT (AMP)

C

I

0.2

PULSE CURVES APPLY BELOW

0.1

1.0

TJ = 150°Cdc

SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C

RATED V

2.0 3.0 5.0 10 20 30 50 10070 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0 ms

CEO

7.0

1.0 ms

Figure 5. Active−Region Safe Operating Area

5.0

, STORAGE TIME (s)

′

s

t μ

0.07

0.05

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

IC/IB = 10

TJ = 25°C TJ = 150°C

IB1 = I ts′ = ts − 1/8 t

10

20 30 50 70 500 700 1000

IC/IB = 20

B2

f

IC, COLLECTOR CURRENT (mA)

100

IC/IB = 20

200 300

100 ms

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − V

CE

operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150_C; T

J(pk)

is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T

v 150_C. At high case temperatures, thermal

J(pk)

limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

5.0

, FALL TIME (s)

f

t μ

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

IC/IB = 10

10

20 30 50 70 500 700 1000

IC/IB = 20

TJ = 25°C TJ = 150°C

VCC = 30 V IB1 = I

100

200 300

IC, COLLECTOR CURRENT (mA)

B2

C

Figure 6. Storage Time

Figure 7. Fall Time

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4

2N4921, 2N4922, 2N4923

)

1000

700 500

300

, DC CURRENT GAIN

FE

h

200

100

70 50

30

TJ = 150°C

25°C

−55 °C

20

10

2.0

3.0 5.0 10 20 30 200 300 500 2000

50 100 1000 3.0 30 100

IC, COLLECTOR CURRENT (mA)

Figure 8. Current Gain

8

10

CES

7

10

IC = 2 x I

CES

6

10

IC ≈ I

CES

5

10

I

VALUES

CES

4

OBTAINED FROM

10

FIGURE 12

, EXTERNAL BASE−EMITTER RESISTANCE (OHMS)

3

10

BE

0

R

30 60 90 120 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 10. Effects of Base−Emitter Resistance

VCE = 1.0 V

VCE = 30 VIC = 10 x I

1.0

0.8

IC = 0.1 A

0.25 A 0.5 A 1.0 A

0.6

0.4

0.2

, COLLECTOR−EMITTER VOLTAGE (VOLTS

CE

V

0

0.2

0.3 0.5 1.0 2.0 5.0 10 20 50 200

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

1.5

TJ = 25°C

1.2

0.9

V

@ IC/IB = 10

BE(sat)

0.6

VOLTAGE (VOLTS)

VBE @ VCE = 2.0 V

0.3

V

@ IC/IB = 10

0

2.0

CE(sat)

5.0 10 20 30 50 100 200 300 2000

3.0 500 1000

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltage

TJ = 25°C

4

10

3

10

2

10

TJ = 150°C

100°C

25°C

1

10

IC = I

0

10

, COLLECTOR CURRENT (A)μI

−1

C

10

REVERSE FORWARD

− 2

10

−0.2

−0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5

CES

VCE = 30 V

VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut−Off Region

+2.5

h

+2.0

+1.5

+1.0

+0.5

*APPLIES FOR IC/IB ≤

*qVC FOR V

0

FE

TJ = 100°C to 150°C

CE(sat)

@V

CE

2

−55 °C to +100°C

−0.5

−1.0

−1.5

−2.0

TEMPERATURE COEFFICIENTS (mV/ C)°

−2.5

2.0

3.0 5.0 10 20 30 50 100 200 2000

qVB FOR V

BE

300 500 1000

IC, COLLECTOR CURRENT (mA)

Figure 13. Temperature Coefficients

+1.0V

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5

2N4921, 2N4922, 2N4923

TO−225

PACKAGE DIMENSIONS

CASE 77−09

ISSUE Z

−B−

−A−

K

F

M

U

Q

132

H

V

G

S

D

2 PL

0.25 (0.010) B

M

0.25 (0.010) B

M

A

M

C

J

R

M

A

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09.

DIM MIN MAX MIN MAX

A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP

__

Q 0.148 0.158 3.76 4.01 R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 V 0.040 −−− 1.02 −−−

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N4921/D

Datasheet 2N4921, 2N4922, 2N4923 Datasheet (ON Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual