Datasheet 2N4920G, 2N4922G Specification

2N4918 - 2N4920 Series

Medium-Power Plastic PNP Silicon Transistors

These medium−power, high−performance plastic devices are

designed for driver circuits, switching, and amplifier applications.

Features

• Low Saturation Voltage − V

• Excellent Power Dissipation, P

= 0.6 Vdc (Max) @ IC = 1.0 A

CE(sat)

= 30 W @ TC = 25_C

D

• Excellent Safe Operating Area

• Gain Specified to I

= 1.0 A

C

• Complement to NPN 2N4921, 2N4922, 2N4923

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage V

Collector Current − Continuous

(Note 1)

Base Current I

Total Power Dissipation @ TA = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. The 1.0 A max I

3.0 A max value is based upon actual current−handling capability of the device (See Figure 5).

2. Indicates JEDEC Registered Data for 2N4918 Series.

value is based upon JEDEC current gain requirements. The

C

2N4918 2N4919 2N4920

THERMAL CHARACTERISTICS (Note 3)

Characteristic

Thermal Resistance,

Junction−to−Case

3. Recommend use of thermal compound for lowest thermal resistance.

V

CEO

V

CBO

EBO

I

C

(Note 2)

B

P

D

TJ, T

stg

Symbol Max Unit

q

JC

40 60 80

5.0 Vdc

1.0

3.0

1.0 Adc

30

0.24

−65 to +150 °C

4.16 °C/W

Vdc

Adc

W/°C

http://onsemi.com

3.0 A, 40−80 V, 30 W

GENERAL PURPOSE

POWER TRANSISTORS

4

1

2

3

FRONT VIEW BACK VIEW

MARKING DIAGRAM

W

xx = 18, 19, 20 Y = Year WW = Work Week

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of this data sheet.

3

2

TO−225

CASE 077

STYLE 1

YWW 2N 49xx

1

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

January, 2017 − Rev. 12

1 Publication Order Number:

2N4918/D

2N4918 − 2N4920 Series

ÎÎÎ

ÎÎÎ ÎÎÎ

ÎÎÎ

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 4)

= 0.1 Adc, IB = 0) 2N4918

(I

C

2N4919 2N4920

Collector Cutoff Current

= 20 Vdc, IB = 0) 2N4918

(V

CE

(V

= 30 Vdc, IB = 0) 2N4919

CE

(V

= 40 Vdc, IB = 0) 2N4920

CE

Collector Cutoff Current

(V

CE

(V

CE

= Rated V = Rated V

CEO

, V

= 1.5 Vdc)

BE(off)

, V

= 1.5 Vdc, TC = 125_C

BE(off)

Collector Cutoff Current

= Rated VCB, IE = 0)

(V

CB

Emitter Cutoff Current

= 5.0 Vdc, IC = 0)

(V

BE

ON CHARACTERISTICS

DC Current Gain (Note 4)

= 50 mAdc, VCE = 1.0 Vdc)

(I

C

(I

= 500 mAdc, VCE = 1.0 Vdc)

C

(I

= 1.0 Adc, VCE = 1.0 Vdc)

C

Collector−Emitter Saturation Voltage (Note 4)

= 1.0 Adc, IB = 0.1 Adc)

(I

C

Base−Emitter Saturation Voltage (Note 4)

= 1.0 Adc, IB = 0.1 Adc)

(I

C

Base−Emitter On Voltage (Note 4)

= 1.0 Adc, VCE = 1.0 Vdc)

(I

C

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)

Small−Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

4. Pulse Test: PW [ 300 ms, Duty Cycle [ 2.0%

Symbol

V

CEO(sus)

I

CEO

I

CEX

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE(on)

f

T

C

ob

h

fe

Min

40 60 80

−

40 30 10

−

3.0

−

25

Max

−

0.5

0.1

0.5

0.1

1.0

−

150

−

0.6

1.3

−

100

−

Unit

Vdc

mAdc

−

Vdc

MHz

pF

−

ORDERING INFORMATION

Device Package Shipping

2N4918 TO−225 500 Unit / Bulk

2N4919 TO−225 500 Unit / Bulk

2N4920 TO−225 500 Unit / Bulk

2N4920G TO−225

500 Unit / Bulk

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

†

www.onsemi.com

2

V

BE(off)

V

in

APPROX

-11 V

APPROX

-11 V

0

t

1

t

2

in

TURN-OFF PULSE

APPROX 9.0 V

0V

t 100 < t t

t

DUTY CYCLE ≈ 2.0%

3

< 15 ns

1

< 15 ns

3

2N4918 − 2N4920 Series

40

30

20

10

, POWER DISSIPATION (WATTS)

D

P

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

5.0

V

CC

V

Cjd<<C

< 500 ms

2

R

C

in

R

B

eb

SCOPE

+4.0 V

RB and R

C

varied to obtain desired current levels

t, TIME (s)μ

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

VCC = 30 V

t

d

VCC = 30 V V

BE(off)

10

= 0

20 30 50 70 100 200 700 1000

V

= 30 V

CC

= 20

I

C/IB

VCC = 60 V

IC/IB = 10, UNLESS NOTED

t

r

V

= 2.0 V

BE(off)

IC, COLLECTOR CURRENT (mA)

TJ = 25°C

= 150°C

T

J

VCC = 60 V

300 500

Figure 2. Switching Time Equivalent Test Circuit

Figure 3. Turn−On Time

www.onsemi.com

3

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

(NORMALIZED)

0.03

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.01

D = 0.5

0.2

0.1

0.05

0.01

SINGLE PULSE

0.02 0.03

2N4918 − 2N4920 Series

P

qJC(t) = r(t) q qJC = 4.16°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500 t, TIME (ms)

- TC = P

JC

1

(pk) qJC

(t)

Figure 4. Thermal Response

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

10

dc

= 25°C

C

1.0 ms

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMP)

C

I

0.2

0.1

1.0

TJ = 150°C

SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ T

PULSE CURVES APPLY BELOW

RATED V

2.0 3.0 5.0 10 20 30 50 10070 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0 ms

CEO

7.0

Figure 5. Active−Region Safe Operating Area

5.0

100

IC/IB = 20

200 300

3.0

2.0

1.0

0.7

0.5

0.3

, STORAGE TIME (s)

0.2

′

s

t μ

0.1

0.07

0.05 10

IC/IB = 10

ts′ = ts - 1/8 t

20 30 50 70 500 700 1000

f

IC, COLLECTOR CURRENT (mA)

TJ = 25°C

= 150°C

T

J

IB1 = I

B2

100 ms

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

− V

C

CE

operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T

J(pk)

v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

5.0

3.0

2.0

1.0

0.7

0.5

0.3

, FALL TIME (s)

f

t μ

0.2

0.1

0.07

0.05 10

IC/IB = 20

IC/IB = 10

20 30 50 70 500 700 1000

IC, COLLECTOR CURRENT (mA)

100

200 300

TJ = 25°C

= 150°C

T

J

VCC = 30 V

= I

I

B1

B2

Figure 6. Storage Time

Figure 7. Fall Time

www.onsemi.com

4

2N4918 − 2N4920 Series

TYPICAL DC CHARACTERISTICS

1000

700 500

300

TJ = 150°C

200

100

, DC CURRENT GAIN

FE

h

70 50

30

25°C

-55°C

20

10

2.0

3.0 5.0 10 20 30 200 300 500 2000

50 100 1000 3.0 30 100

IC, COLLECTOR CURRENT (mA)

Figure 8. Current Gain

8

10

IC = 10 I

7

10

6

10

5

10

4

10

IC ≈ I

CES

I

VALUES

CES

OBTAINED FROM

CES

IC = 2x I

FIGURE 13

, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

3

10

BE

0

R

30 60 90 120 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 10. Effects of Base−Emitter Resistance

VCE = 1.0 V

VCE = 30 V

CES

1.0

IC = 0.1 A

0.25 A 0.5 A 1.0 A

0.8

0.6

TJ = 25°C

0.4

0.2

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

0.2

0.3 0.5 1.0 2.0 5.0 10 20 50 200

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

1.5

1.2 TJ = 25°C

0.9

V

@ IC/IB = 10

BE(sat)

0.6

VOLTAGE (VOLTS)

VBE @ VCE = 2.0 V

0.3

V

@ IC/IB = 10

CE(sat)

0

5.0 10 20 30 50 100 200 300 2000

2.0

3.0 500 1000

, COLLECTOR CURRENT (mA)

I

C

Figure 11. “On” Voltage

2

10

1

10

TJ = 150°C

0

10

-1

10

100°C

-2

10

, COLLECTOR CURRENT (A)μI

4

C

10

IC = I

CES

VCE = 30 V

25°C

REVERSE

3

10

-0.2

-0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5

FORWARD

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut−Off Region

+2.5

h

@V

FE

+2.0

+1.5

+1.0

+0.5

*APPLIES FOR I

0

*qVC FOR V

CE(sat)

C/IB

<

CE

2

TJ = 100°C to 150°C

TJ = -55°C to +100°C

-0.5

-1.0

-1.5

-2.0

TEMPERATURE COEFFICIENTS (mV/ C)°

-2.5

2.0

3.0 5.0 10 20 30 50 100 200 2000

qVB FOR V

BE

300 500 1000

IC, COLLECTOR CURRENT (mA)

Figure 13. Temperature Coefficients

+1.0V

www.onsemi.com

5

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

4

TO−225

CASE 77−09

ISSUE AD

DATE 25 MAR 2015

1

2

3

2

1

FRONT VIEW BACK VIEW

SCALE 1:1

Q

P

2X

b2

e

2X

E

A1

D

123

L1

b

c

FRONT VIEW SIDE VIEW

A

PIN 4

BACKSIDE TAB

L

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. NUMBER AND SHAPE OF LUGS OPTIONAL.

MILLIMETERS

DIM MIN MAX

A 2.40 3.00

A1 1.00 1.50

b 0.60 0.90

b2 0.51 0.88

c 0.39 0.63 D 10.60 11.10 E 7.40 7.80 e 2.04 2.54 L 14.50 16.63

L1 1.27 2.54

P 2.90 3.30 Q 3.80 4.20

GENERIC

MARKING DIAGRAM*

YWW XX XXXXXG

Y = Year WW = Work Week XXXXX = Device Code G = Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

STYLE 1:

PIN 1. EMITTER

2., 4. COLLECTOR

3. BASE

STYLE 6:

PIN 1. CATHODE

2., 4. GATE

3. ANODE

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

STYLE 2:

PIN 1. CATHODE

2., 4. ANODE

3. GATE

STYLE 7:

PIN 1. MT 1

2., 4. GATE

3. MT 2

98ASB42049B

TO−225

STYLE 3:

PIN 1. BASE

2., 4. COLLECTOR

3. EMITTER

STYLE 8:

PIN 1. SOURCE

2., 4. GATE

3. DRAIN

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

STYLE 4:

PIN 1. ANODE 1

2., 4. ANODE 2

3. GATE

STYLE 9:

PIN 1. GATE

2., 4. DRAIN

3. SOURCE

STYLE 5:

PIN 1. MT 1

2., 4. MT 2

3. GATE

STYLE 10:

PIN 1. SOURCE

2., 4. DRAIN

3. GATE

PAGE 1 OF 1

www.onsemi.com

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com

onsemi Website: www.onsemi.com

TECHNICAL SUPPORT North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative

◊