Datasheet 2N4920, 2N4919, 2N4918 Datasheet (ON Semiconductor)

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ON Semiconductor



2N4918

Medium-Power Plastic PNP
Silicon Transistors

...designed for driver circuits, switching, and amplifier

applications. These high–performance plastic devices feature:

• Low Saturation Voltage —

V

CE(sat)

• Excellent Power Dissipation Due to Thermopad Construction —

PD = 30 W @ TC = 25C

• Excellent Safe Operating Area

• Gain Specified to I

• Complement to NPN 2N4921, 2N4922, 2N4923

*MAXIMUM RATINGS

ООООООООООООООООООООО

Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous (1)

ООООООООО

Base Current
Total Power Dissipation @ TC = 25°C

Derate above 25C

ООООООООО

Operating & Storage Junction

Temperature Range

= 0.6 Vdc (Max) @ IC = 1.0 Amp

= 1.0 Amp

C

Ratings

Symbol

V

CEO

V

CB

V

EB

IC*

Î

I

B

P

D

Î

TJ, T

stg

ООООООО

ООООООО

2N4918

40
40

2N4919

60
60

5.0

1.0

3.0

1.0
30

0.24

–65 to +150

2N4920

80
80

Unit

Vdc
Vdc
Vdc
Adc

Î

Adc

Watts
W/C

Î

C

thru

2N4920

*ON Semiconductor Preferred Device

3 AMPERE

GENERAL–PURPOSE

POWER TRANSISTORS

40–80 VOLTS

30 WATTS

STYLE 1:

3

2

1

TO–225AA TYPE

PIN 1. EMITTER

CASE 77–09

*

2. COLLECTOR

3. BASE

ООООООООООООООООООООО

THERMAL CHARACTERISTICS (2)

Characteristic

Thermal Resistance, Junction to Case

Symbol

θ

JC

Max

4.16

Unit

C/W

*Indicates JEDEC Registered Data for 2N4918 Series.
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.

The 3.0 Amp maximum value is based upon actual current–handling capability of the
device (See Figure 5).

(2) Recommend use of thermal compound for lowest thermal resistance.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2002

1 Publication Order Number:

April, 2002 – Rev. 10

2N4918/D

2N4918 thru 2N4920

40

30

20

10

, POWER DISSIPATION (WATTS)

D

P

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (°C)

C

Figure 1. Power Derating

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2

2N4918 thru 2N4920

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ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 0.1 Adc, IB = 0) 2N4918

ОООООООООООООООООООО

ОООООООООООООООООООО

2N4919
2N4920

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0) 2N4918

ОООООООООООООООООООО

(VCE = 30 Vdc, IB = 0) 2N4919

ОООООООООООООООООООО

(VCE = 40 Vdc, IB = 0) 2N4920

Collector Cutoff Current

ОООООООООООООООООООО

(VCE = Rated V
(VCE = Rated V

ОООООООООООООООООООО

CEO
CEO

, V
, V

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TC = 125C

BE(off)

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

Emitter Cutoff Current

ОООООООООООООООООООО

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 50 mAdc, VCE = 1.0 Vdc)

ОООООООООООООООООООО

(IC = 500 mAdc, VCE = 1.0 Vdc)

ОООООООООООООООООООО

(IC = 1.0 Adc, VCE = 1.0 Vdc)

Collector–Emitter Saturation Voltage (1)

(IC = 1.0 Adc, IB = 0.1 Adc)

ОООООООООООООООООООО

Base–Emitter Saturation Voltage (1)

(IC = 1.0 Adc, IB = 0.1 Adc)

Base–Emitter On Voltage (1)

ОООООООООООООООООООО

(IC = 1.0 Adc, VCE = 1.0 Vdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

*Indicates JEDEC Registered Data.
(1) Pulse Test: PW  300 µs, Duty Cycle  2.0%

Symbol

V

CEO(sus)

ÎÎÎ

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I

CEO

ÎÎÎ

ÎÎÎ

I

CEX

ÎÎÎ

ÎÎÎ

I

CBO

I

EBO

ÎÎÎ

h

FE

ÎÎÎ

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(sat)

V

BE(on)

ÎÎÎ

f

T

C

ob

h

fe

Min

40

Î

60

Î

80

—

Î

—

Î

—

Î

—
—

Î

—

—

Î

40

Î

30

Î

10
—

Î

—

—

Î

3.0
—
25

Max

—

ÎÎ

—

ÎÎ

—

ÎÎ

0.5

0.5

ÎÎ

0.5

ÎÎ

0.1

0.5

ÎÎ

0.1

1.0

ÎÎ

—

ÎÎ

150

ÎÎ

—

0.6

ÎÎ

1.3

1.3

ÎÎ

—

100

—

Unit

Vdc

Î

Î

mAdc

Î

Î

mAdc

Î

Î

mAdc

mAdc

Î

—

Î

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Vdc

Î

Vdc

Vdc

Î

MHz

pF
—

V

BE(off)

0

V

in

V

CC

APPROX

-11 V
t

1

V

in

Cjd<<C

APPROX 9.0 V

0V

t1 < 15 ns
100 < t
t3 < 15 ns

t

DUTY CYCLE ≈ 2.0%

3

< 500 µs

2

in

APPROX

-11 V

t

2

TURN-OFF PULSE

Figure 2. Switching Time Equivalent Test Circuit

R

C

R

B

eb

+4.0 V

RB and R
varied to
obtain desired
current levels

5.0

3.0

2.0

SCOPE

1.0

0.7

0.5

t, TIME (s)µ

0.3

C

0.2

0.1

0.07

0.05
10

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3

VCC = 30 V

IC/IB = 10, UNLESS NOTED

IC/IB = 20

VCC = 30 V

t

d

VCC = 60 V

t

r

V

BE(off)

= 2.0 V

VCC = 30 V
V

= 0

BE(off)

20 30 50 70 100 200 700 1000

300 500

IC, COLLECTOR CURRENT (mA)

Figure 3. Turn–On Time

T

= 25°C

J

T

= 150°C

J

VCC = 60 V

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

(NORMALIZED)

0.03

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.01

0.01

D = 0.5

0.2

0.1

0.05

0.01

SINGLE PULSE

0.02 0.03

2N4918 thru 2N4920

P

θJC(t) = r(t) θ
θJC = 4.16°C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
t, TIME (ms)

- TC = P

JC

1

(pk) θJC

(t)

Figure 4. Thermal Response

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

10

dc

= 25°C

C

1.0 ms

5.0

T

2.0

1.0

0.5

, COLLECTOR CURRENT (AMP)

C

I

0.2

0.1

1.0

= 150°C

J

SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ T

PULSE CURVES APPLY BELOW

RATED V

2.0 3.0 5.0 10 20 30 50 10070
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0 ms

CEO

7.0

Figure 5. Active–Region Safe Operating Area

5.0

100

IC/IB = 20

200 300

3.0

2.0

1.0

0.7

0.5

0.3

, STORAGE TIME (s)

0.2

′

s

t µ

0.1

0.07

0.05
10

IC/IB = 10

t

′ = t

- 1/8 t

s

s

f

20 30 50 70 500 700 1000

IC, COLLECTOR CURRENT (mA)

T

= 25°C

J

T

= 150°C

J

IB1 = I

100 µs

B2

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – V

CE

operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T

J(pk)

 150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.

5.0

3.0

2.0

1.0

0.7

0.5

0.3

, FALL TIME (s)

f

t µ

0.2

0.1

0.07

0.05
10

IC/IB = 20

IC/IB = 10

20 30 50 70 500 700 1000

IC, COLLECTOR CURRENT (mA)

100

T
T

200 300

= 25°C

J

= 150°C

J
VCC = 30 V
IB1 = I

B2

Figure 6. Storage Time

Figure 7. Fall Time

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2N4918 thru 2N4920

TYPICAL DC CHARACTERISTICS

1000

700
500

T

= 150°C

300

200

100

70
50

, DC CURRENT GAIN

FE

h

30

20

10

2.0

3.0 5.0 10 20 30 200 300 500 2000

J

25°C

-55°C

50 100 1000 3.0 30 100

IC, COLLECTOR CURRENT (mA)

Figure 8. Current Gain

8

10

IC = 10 I

7

10

6

10

5

10

4

10

, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

3

10

BE

0

R

I

≈ I

C

CES

I

VALUES

CES

OBTAINED FROM
FIGURE 13

30 60 90 120 150

T

, JUNCTION TEMPERATURE (°C)

J

CES

IC = 2x I

Figure 10. Effects of Base–Emitter Resistance

VCE = 1.0 V

VCE = 30 V

CES

1.0

IC = 0.1 A

0.8

0.6

T

= 25°C

J

0.4

0.2

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

0.2

0.3 0.5 1.0 2.0 5.0 10 20 50 200

0.25 A 0.5 A 1.0 A

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

1.5

1.2

0.9

0.6

VOLTAGE (VOLTS)

0.3

T

= 25°C

J

V

@ IC/IB = 10

BE(sat)

VBE @ VCE = 2.0 V

V

@ IC/IB = 10

0

2.0

3.0 500 1000

CE(sat)

5.0 10 20 30 50 100 200 300 2000

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltage

2

10

1

10

T

= 150°C

0

10

-1

10

-2

10

, COLLECTOR CURRENT (A)µI

4

C

10

REVERSE

3

10

-0.2

-0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5

J

100°C

IC = I

CES

25°C

FORWARD

VBE, BASE-EMITTER VOLTAGE (VOLTS)

VCE = 30 V

Figure 12. Collector Cut–Off Region

+2.5

h

@V

FE

+2.0

+1.5

+1.0

+0.5

0

-0.5

-1.0

-1.5

-2.0

TEMPERATURE COEFFICIENTS (mV/ C)°

-2.5

2.0

3.0 5.0 10 20 30 50 100 200 2000

*APPLIES FOR IC/IB <

*θ

FOR V

VC

θ

CE(sat)

FOR V

VB

BE

IC, COLLECTOR CURRENT (mA)

CE

2

T

= 100°C to 150°C

J

T

= -55°C to +100°C

J

300 500 1000

Figure 13. Temperature Coefficients

 1.0V

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2N4918 thru 2N4920

PACKAGE DIMENSIONS

TO–225AA

CASE 77–09

ISSUE W

–B–

–A–

K

F

M

U

Q

132

H

V

G

0.25 (0.010) B

S

D

2 PL

M

0.25 (0.010) B

A

M

A

M

STYLE 1:

PIN 1. EMITTER

C

J

R

M

M

M

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66

F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP



Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 --- 1.02 ---

MILLIMETERSINCHES

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Notes

2N4918 thru 2N4920

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2N4918 thru 2N4920

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