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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors 2N4913
DESCRIPTION
·Low Collector Saturation Voltage : V
·DC Current Gain : hFE= 25-100 @IC= 2.5A
·Complement to Type 2N4904
APPLICATIONS
·Designed for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= 1.5V(Max.)@ IC= 5A
CE(sat)
PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 5 A
IB Base Current-Continuous 1 A
PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage 40 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
87.5 W
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 2.0 ℃/W
PARAMETER MAX UNIT
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors 2N4913
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE(on)
I
CEO
I
CBO
I
CEV
I
EBO
Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 40 V
Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 1.0 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V
Base-Emitter On Voltage IC= 2.5A; VCE= 2V 1.4 V
Collector Cutoff Current VCE= 40V; IB= 0 1.0 mA
Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA
Collector Cutoff Current
Emitter Cutoff Current VEB=-5V; IC= 0 1.0 mA
PARAMETER CONDITIONS MIN MAX UNIT
VCE= 40V; V
VCE= 40V; V
= -1.5V
BE(
)
off
= -1.5V, TC=150℃
BE(
)
off
0.1
2.0
mA
h
DC Current Gain IC= 2.5A; VCE= 2V 25 100
FE-1
h
DC Current Gain IC= 5A; VCE= 2V 7
FE-2
fT Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V; f
= 1.0MHz
test
4 MHz
isc Website：www.iscsemi.cn
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