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INCHANGE Semiconductor isc Product Specification
oltage
oltage
isc Silicon NPN Power Transistor 2N4911
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·Low Collector Saturatioin Voltage : V
CE(sat)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for driver circuits, switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
= 60V(Min)
= 0.6V(Max.)@ IC= 1A
SYMBOL
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 1 A
ICM Collector Current-Peak 4 A
IB Collector Current-Continuous 1 A
PC
TJ Junction Temperature 200 ℃
T
stg
Collector-Base V
Collector-Emitter V
Emitter-Base Voltage 5 V
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -65~200
PARAMETER VALUE UNIT
60 V
60 V
25 W
THERMAL CHARACTERISTICS
℃
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 7.0 ℃/W
isc Website：www.iscsemi.cn
PARAMETER MAX UNIT
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N4911
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
V
BE
V
BE
I
CEX
I
CEO
I
CBO
I
EBO
h
FE-1
(sat)
(sat)
(on)
Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 60 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.6
Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.3
Base-Emitter On Voltage IC= 1A ; VCE= 1V 1.3
Collector Cutoff Current
Collector Cutoff Current VCE=30V; IB= 0 0.5 mA
Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 50mA ; VCE= 1V 40
PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCE= 60V;V
VCE= 60V;V
= 1.5V
BE(
)
off
= 1.5V;TC=150℃
BE(
)
off
0.1
1.0
V
V
V
mA
h
DC Current Gain IC= 500mA ; VCE= 1V 20 100
FE-2
h
DC Current Gain IC= 1A ; VCE= 1V 10
FE-3
fT Current-Gain—Bandwidth Product
COB Output Capacitance
IC= 0.25A; VCE= 10V, f
IE= 0; VCB= 10V; f
test
= 1MHz
test
= 100kHz
3 MHz
100 pF
isc Website：www.iscsemi.cn
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