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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2N4909
DESCRIPTION
·Low Collector Saturation Voltage : V
·DC Current Gain : hFE= 20-80 @IC= -4A
APPLICATIONS
·Designed for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= -0.75V(Max.)@ IC= -4A
CE(sat)
PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -10 A
IB Base Current-Continuous -4 A
PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage -80 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -5 V
150 W
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 2.0 ℃/W
PARAMETER MAX UNIT
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2N4909
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
V
BE
V
BE(on)
I
CEO
I
CBO
I
CEX
I
EBO
(sat)
(sat)
Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -80 V
Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.75 V
Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.5 V
Base-Emitter On Voltage IC= -4A; VCE= -4V -1.5 V
Collector Cutoff Current VCE= -80V; IB= 0 -1.0 mA
Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA
Collector Cutoff Current
Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA
PARAMETER CONDITIONS MIN MAX UNIT
VCE= -80V; V
VCE= -80V; V
= -1.5V
BE(
)
off
= -1.5V, TC=150℃
BE(
)
off
-0.1
-2.0
mA
h
DC Current Gain IC= -4A; VCE= -4V 20 80
FE-1
h
DC Current Gain IC= -10A; VCE= -4V 5
FE-2
fT Current-Gain—Bandwidth Product
IC= -1A; VCE= -10V; f
= 1.0MHz
test
4 MHz
isc Website：www.iscsemi.cn
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